An Unexpected Role of H During SiC Corrosion in Water (original) (raw)
2020, The Journal of Physical Chemistry C
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Pitting corrosion in CVD SiC at 300°C in deoxygenated high-purity water
This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues. Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: http://www.elsevier.com/copyright a b s t r a c t SiC is a candidate for nuclear applications at elevated temperatures but has not been fully studied under typical light-water reactor operating conditions, such as moderate temperatures and high pressures. Coupons of high-purity chemical vapor deposited SiC were exposed to deoxygenated, pressurized water at 573 K and 10 MPa for up to 5400 h. Ceramographic examination of the exposed SiC surfaces revealed both embryonic and large, d > 300 lm, pits on the surface after initial exposure for 4000 h. The pits were characterized using scanning electron microscopy for structure and chemistry analysis. Pit densities were also determined by standard counting methods. The chemical analysis revealed that the pits are associated with the formation of silica and subsequent loss of Si, which is expected due to several suggested reactions between SiC and water. Subsequent exposure under nominally identical water chemistry conditions for an additional 1400 h removed the pits and the samples exhibited general corrosion with measurable loss of Si from the surface.
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