High resolution, high channel count mid-infrared arrayed waveguide gratings in silicon (original) (raw)
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Design and fabrication of arrayed waveguide grating multiplexers on silicon-on-insulator platforms
Optical Engineering, 2007
We report on the design, fabrication, and optical characteristics of arrayed waveguide grating ͑AWG͒ devices on silicon-on-insulator ͑SOI͒ platforms to act as multiplexers in a hybridly integrated wavelength division multiplexing ͑WDM͒ transmitter for telecommunications and datacom applications. In order to achieve efficient coupling to laser diodes, SOI layers with 4-m-thick Si were used to form rib waveguides. The AWG devices comprised eight channels with a channel spacing of 200 GHz around a center wavelength at 1550 nm. AWG integration with variable optical attenuators is demonstrated to add channel equalization ability.
Optical Engineering, 2014
A linear tapered double S-shaped arrayed waveguide grating (AWG) was designed as an alternative to a U-shaped AWG, and a complete transmission spectrum for 18 channels of coarse wavelength-division multiplexing (CWDM) was demonstrated. The silicon-on-insulator based AWG with a rib waveguide structure with a broad channel spacing of 20 nm was designed to serve as a multiplexer/demultiplexer. A beam propagation method modeling simulation under transverse electric mode polarization over a free spectrum range of 700 nm was used for the design process. The geometrical dimensions of the AWG rib structure were optimized to achieve the lowest reported insertion loss of 1.07 dB and adjacent crosstalk of −38.83 dB. The influence of different etching depths on the top Si layer of the AWG for a constant core width of 0.6 μm as well as birefringence effects were also investigated. A transmission spectrum response at the output port close to the standard CWDM wavelength grid range of 1271 to 1611 nm with an average channel spacing of 2485 GHz was obtained.
Compact Silicon Nitride Arrayed Waveguide Gratings for Very Near-infrared Wavelengths
In this letter, we report a novel high-index-contrast silicon nitride arrayed waveguide grating (AWG) for very nearinfrared wavelengths. This device is fabricated through a process compatible with a complementary metal-oxide-semiconductor fabrication line and is therefore suitable for mass fabrication. The large phase errors that usually accompany high-index-platform AWGs are partly mitigated through design and fabrication adaptions, in particular the implementation of a two-level etch scheme. Multiple devices are reported, among which a 0.3-mm 2 device which, after the subtraction of waveguides loss, has a −1.2 dB on-chip insertion loss at the peak of the central channel and 20-dB crosstalk for operation ∼900 nm with a channel spacing of 2 nm. These AWGs pave the way for numerous largescale on-chip applications pertaining to spectroscopy and sensing.
IEEE Journal of Selected Topics in Quantum Electronics, 2019
Mid-infrared light sources are attracting attention for use in spectroscopic sensing, thermal imaging, and infrared countermeasures. Integration of these sources on Si-based waveguides allows for more functional and complex photonic circuits to be integrated on a single chip. This paper focuses on the key aspects of this integrated platform. The operation of silicon-on-insulator waveguides beyond 4.0 µm wavelength with increasing waveguide core thickness is discussed, and the effects of various cladding materials on waveguide propagation loss is demonstrated. Low loss waveguides and Mach-Zehnder interferometers in Ge-on-Si waveguide platform are discussed and beam combiners in the form of arrayed waveguide gratings are demonstrated in both the platforms. Interband cascade lasers are integrated on silicon-oninsulator waveguides with direct bonding to realize Fabry-Perot lasers. Power scaling of integrated lasers is validated by integrating quantum cascade lasers with silicon-on-insulator beam combiners. Results for the first integrated Fabry-Perot quantum cascade lasers on Ge-on-Si waveguides are discussed, together with the potential use of these waveguides to provide a better heat sink for integrated mid-infrared light sources.
Optics Express, 2017
We present the design, fabrication and characterization of efficient fiber-to-chip grating couplers on a Germanium-on-Silicon (Ge-on-Si) and Germanium-on-silicon-on-insulator (Ge-on-SOI) platform in the 5 µm wavelength range. The best grating couplers on Ge-on-Si and Ge-on-SOI have simulated coupling efficiencies of-4 dB (40%) with a 3 dB bandwidth of 180 nm and-1.5 dB (70%) with a 3 dB bandwidth of 200 nm, respectively. Experimentally, we show a maximum efficiency of-5 dB (32%) and a 3 dB bandwidth of 100 nm for Ge-on-Si grating couplers, and a-4 dB (40%) efficiency with a 3 dB bandwidth of 180 nm for Ge-on-SOI couplers.
Fabrication of silicon reflection-type arrayed-waveguide gratings with distributed Bragg reflectors
Optics Letters, 2013
Silicon reflection-type arrayed-waveguide gratings (AWGs) consisting of all straight array waveguides are experimentally demonstrated for the first time to our knowledge. The AWG has 14 output channels with 400 GHz channel spacing and a footprint of 230 μm × 530 μm. The minimum on-chip loss of 3.0 dB and crosstalk of −20 dB are achieved by using a second-order distributed Bragg reflector facet.
Low loss silicon waveguides for the mid-infrared
Optics Express, 2011
Silicon-on-insulator (SOI) has been used as a platform for nearinfrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieved at a wavelength of 3.39 µm. We also report propagation loss measurements for silicon on porous silicon (SiPSi) waveguides at the same wavelength.
Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers
IEEE Photonics Technology Letters, 2000
In this letter, we describe the use of a germaniumon-silicon waveguide platform to realize an arrayed waveguide grating (AWG) operating in the 5 µm wavelength range, which can be used as a wavelength multiplexer for mid-infrared (midIR) light engines or as the core element of a midIR spectrometer. Ge-on-Si waveguide losses in the range 2.5-3.5 dB/cm for TE polarized light and 3-4 dB/cm for TM polarized light in the 5.15-5.4 µm wavelength range are reported. A 200 GHz channel spacing 5-channel AWG with an insertion loss/crosstalk of 2.5/3.1 dB and 20/16 dB for TE and TM polarization, respectively, is demonstrated.