Ambipolar Conversion of Polymer-Coated All Single-Walled Carbon Nanotube Field-Effect Transistors (original) (raw)

This research presents a method for creating all-single-walled carbon nanotube (SWNT) field-effect transistors (FETs) that exhibit ambipolar transport capabilities through a polymer coating technique. By transferring SWNT devices to a flexible polymer substrate, the study demonstrates a transition from conventional p-type conduction to ambipolar behavior, thereby enhancing the potential for flexible optoelectronic applications. Experimental results show that the use of poly(vinyl alcohol) as a coating material acts to suppress charge transfer, facilitating the simultaneous injection of electrons and holes, which is crucial for developing flexible electronic devices.