A millimeter Wave MMIC Power Amplifier using 0.15 um GaN for Space Communication Systems (original) (raw)
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Design of MMIC based Ka-band Power Amplifier using 0.15um GaN for Satellite Communication
IEEE, 2023
This paper presents the design and performance evaluation of a 0.15um GaN Ka-band power amplifier using the Monolithic Microwave Integrated Circuit (MMIC) technique for satellite communication. Low loss prototype network are designed using Win semiconductor's 0.15um GaN process design kit(PDK). The amplifier achieves stability greater than 1.5, with S-parameter characteristics exhibiting S11 less than-10 dB, S21 greater than 10 dB, S22 less than-10 dB. Furthermore, a power added efficiency (PAE) of 25% is achieved. The results demonstrate the viability of the designed power amplifier for efficient and high gain in Ka-band satellite communication applications.
X band GaN Based MMIC Power Amplifier With 36.5dBm P 1-dB for Space Applications
An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P 1dB), 40% power added efficiency (PAE) at (P 1dB) in the desired frequency band (8 GHz-8.4 GHz) with V ds = 30V.
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
This paper describes a C-band monolithic high power amplifier implemented with a 0.25 ȝm AlGaN/GaN HEMT process. The circuit has been designed for use in synthetic aperture radar antenna modules in space applications. The amplifier is made up of two stages: the final stage consists of eight devices for 9.6 mm of total periphery that are merged together to form a single power-bar. A quasi-inverse class-F regime for the HEMTs is implemented by harmonic tuning in order to achieve the best tradeoff between maximum output power and efficiency. When operating in pulsed mode with 50 ȝs pulse width and 10% duty cycle, the amplifier delivers about 40 watt with 21 dB of associated gain and 40% PAE over a 15% bandwidth centered at 5.4 GHz. The proposed MMIC HPA is a very valuable replacement for lower output power MMIC GaAs HPAs or hybrid HPAs, which are currently exploited at C-band for these applications. Index Terms-High Power Amplifier, MMIC, AlGaN/GaN, high efficiency power amplifiers.
2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings, 2010
An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Radio links, is designed to reach the maximum efficiency at the output power back-off level where the data distribution function of the modulated input signal has its maximum. The design approach was carried out through a careful investigation of load pull measurements at the fundamental and second harmonic, in conjunction with an accurate active device model, thus leading to a robust design strategy. The designed PA shows, at 7 GHz, a maximum PAE of 35% at more than 7 dB of back-off from the maximum output power and the Doherty high efficiency region covers a 10 dB back-off range from saturation; the maximum output power is in excess of 37 dBm. The MMIC power amplifier has been fabricated at the GigaHertz Centre of Chalmers University, within a collaboration Politecnico di Torino-Ericsson Telecomunicazioni S.P.A.
This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7-15 GHz dual-band combined power amplifiers, both based on a commercial foundry process. The employed architectures, the main design steps and the pros and cons of using gallium nitride technology are highlighted. The measured performance demonstrates the potentialities of the employed technology, and the progress in the accuracy, reliability and performance of the process.
High-efficiency X band GaN power amplifier for small satellite downlink system
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
A high-speed downlink communication system is required to meet various applications for small satellites. The purpose of this research is to develop a high-data-rate (typically over 300Mbps) communication system. Generally, the operation at nonlinear region provides high efficiency for a RF power amplifier. However the amplitude-phase modulated signal, which is an efficient scheme in term of frequency band, requires high linearity. In order to amplify amplitude-phase modulated signal for high data rate, a 2W X Band GaN-HEMT power amplifier and digital pre-distortion technique were developed. In this paper measurements and simulations of the system are presented.
GaN-Based RF Power Devices and Amplifiers
Proceedings of The IEEE, 2008
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.
Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
International Journal of Microwave and Wireless Technologies, 2010
The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 mm. Based on a GaN25 process with a gate length of 0.25 mm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.
A compact 16 watt X-band GaN-MMIC power amplifier
… Digest, 2006. IEEE …, 2006
GaN MMIC power amplifiers for X-Band applications are presented delivering more than 16 W of cw output power while being extremely small in chip size. With a single-device amplifier on a 1.8x2.2 mm 2 chip 7.8 W output power at 8 GHz are achieved with a maximum PAE of 44%. On a chip of 2.2x3.3 mm 2 size only, a two-stage amplifier is realized with 18 dB of linear gain and 16 W cw output power at 8 GHz. PAE of the MMIC reaches 30%.
Design of high power S-band GaN MMIC power amplifiers for WiMAX applications
2011
This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of these MMICs were combined by using off-chip Lange Couplers, 45.3 dBm output power with a 45%PAE @3.5Ghz and 16 dB small signal gain were obtained with less than 0.2 dB gain ripple in the 3.3-3.8 GHz frequency range.