Growth of CuAlTe2 films by RF sputtering (original) (raw)

CuAITe 2 films have been grown by RF sputtering on both unheated and heated glass substrates. The X-ray diffraction spectra exhibit one diffraction line at 24.60 ° corresponding to the (112) direction which is the preferred orientation in the chalcopyrite phase. When deposited onto 1500C heated substrates, the formation of binary compounds is favoured. The resistivity variations versus the temperature show a peak around T = 140°C. In order to study the electrical properties of p-type CuAITe 2 samples, ohmic contacts were prepared by RF sputtering of Mo onto these films.