Optical Absorption Enhancement in Amorphous Silicon Films and Solar Cell Precursors Using the Aluminum-Induced Glass Texturing Method (original) (raw)
Related papers
The paper reports effects of front and rear texturing and their combinations on absorption enhancement in liquid phase crystallized (LPC) silicon (Si) thin-films on glass. In order for Si films to remain continuous after LPC, the root-mean-square (RMS) roughness of the glass at the glass-Si interface has to be less than 600 nm. The LPC Si on textured glass produces elongated grains of several hundred microns in width and up to centimeters in length, comparable to the films crystallized on planar glass. Texturing of the glass-Si interface is found to give the highest potential J sc ; 25.3 mA/cm 2 , or 24% enhancement compared to a planar reference film, with air as back surface reflector. It confirms the largest light-trapping effect at this interface in superstrate-oriented LPC Si thin-film solar cells due to both lower reflection and enhanced light scattering over the whole solar spectrum.
Optical enhancement of amorphous silicon solar cells
1997
In this paper we describe the optical admittance method [1, 2] and discuss its use as a design tool to improve the conversion efficiency and the stability of typical single and double junction a-Si:H solar cells of the type: glass/TCO/pin/TCO/metal, and glass/TCO/pin/pin/metal. The use of silver, aluminium and combined TCO/metal rear contacts is also analysed.
Light Absorption Enhancement in Laser-Crystallized Silicon Thin Films on Textured Glass
Liquid-phase crystallization of Si films on textured glass by line-focus diode laser produces a material with large highquality grains of several hundred micrometers in width and up to centimeters in length, similar to the films crystallized on planar glass. A combination of glass texturing, rear Si texturing, white paint rear reflector, and a front moth-eye antireflection foil on a 7-μm absorber results in significant broadband absorption enhancement in the Si film with potential short-circuit current densities in solar cells of 27.8 mA/cm 2 or 36.3% enhancement compared with a planar reference film without light-trapping features.
Enhanced Absorption in Laser-Crystallized Silicon Thin Films on Textured Glass
This paper reports enhanced absorption in lasercrystallized Si thin films on abrade-textured glass. The Si film on textured glass has large high-quality grains of several hundred micrometers in width and up to several centimeters in length. A combination of glass texturing, rear Si texturing, white paint rear reflector, and front moth-eye antireflection foil on a 10-μm-thick Si film (on SiO x /SiN x /SiO x intermediate layer) shows a large broadband absorption enhancement with potential short-circuit current densities up to 29.5 mA/cm 2 (26.1% enhancement as compared with a planar reference).
1998
We investigated the aluminum-induced crystallization of amorphous silicon (a-Si) during the aluminum-induced layer exchange (ALILE) process, in which a stack of glass/Al/a-Si is transformed into a glass/polycrystalline silicon (poly-Si)/Al(Si) structure by an annealing step well below the eutectic temperature of the Al/Si system. Our experiments resulted in continuous large-grained poly-Si films on glass substrates. The nucleation and the growth of the crystalline phase during the ALILE process was observed using an optical microscope. We found an activation energy of 1.8 eV for the nucleation process and we related this energy to a large barrier at the a-Si/Al interface. Ó