Porous silicon processing for enhancing thin silicon membranes fabrication (original) (raw)

2003

Abstract

Recent works (1, 2) show the possibility of silicon (Si) micromachining using processes combination that applies porous silicon (PS) as sacrificial layers previously masked by hydrogen ion implantation (H + I.I.) and rapid thermal annealing (RTA). With this new technology, it is possible to fabricate Si membranes with thickness of less than one micron. This work presents the result obtained by means of conventional thermal annealing (CTA) processes included after RTA, to control the thickness of Si with H + .I.I., as desired. As a result of CTA processes implementation, Si membranes with H + .I.I. layers from I to 4 microns of thickness were obtained, using adequate implantation dose.

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