Design, implementation and evaluation of Broadband Low Noise Amplifier (LNA) for radiometer (original) (raw)
Efficient Wideband High Gain Low Noise Amplifier in Modern Radars
in this paper a wide band single stage pseudo morphic high electron mobility transistor (PHMET) amplifier has been designed at 5.8 GHz, the input and output matching circuits have a pi form.Noise cancelling principle and sensitivity analysis are performed .Simulation results have been compared with their correspondence in [10] give 2.71 dB improvement in amplifier gain at the same noise figure (N.F) and input, output returns loss. A new optimized low noise amplifier (LNA) using PHEMT at 3 GHZ have been designed to achieve an improvements of 3.3 dB in amplifier gain and 1.81 dB in noise figure.Also the two stages (common gate in cascaded with common source) LNA have been analyzed and optimized for (1-16) GHz full band application to achieve maximum gain over a wide frequency band. Simulation results carried out sever improvement in amplifier gain over the results obtained for the two structures in [16-17] respectively with no change in N.F value .The improvement in optimized gain for the first and second structures are (3.278, 2.82) dB. The comparative study between the traditional and optimized structures showing a superior performance of LNA making them sutiable to be used in modern radar systems.
Design of narrow band UHF low noise amplifier for wind profilers
Microwave and Optical Technology Letters, 2015
The design of UHF low noise amplifier (LNA) aiming for wind profiling radar application is presented in this article. The receiver sensitivity in detecting long distance atmospheric signals of a wind profiling radar depends on the noise performance of the LNA. Modified source degenerated inductance methodology along with the high pass matching circuit is used for the improvement of noise figure, input and output return losses. It is shown that the designed LNA circuit is capable of achieving low noise performance with narrow band tuning at 1.3 GHz. The LNA is designed in a pHEMT technology and fabricated on a RT/duroid substrate. The measured results of the designed LNA show a maximum gain of 18.78 dB with an associated noise figure of 0.45 dB. The input and output return losses (S 11 and S 22) are 10.7 and 14 dB and we have achieved a high third order input intercept point (IIP3) of 52 dBm.
HIGH-GAIN SUB-DECIBEL NOISE FIGURE LOW NOISE AMPLIFIER FOR ATMOSPHERIC RADAR
Wiley Publication, 2016
This article presents the design of a compact and low-cost single-stage narrow band low-noise amplifier (LNA) for atmospheric radar application. Active feedback technique is employed to improve linearity without affecting the noise figure and gain. The source-degenerated inductor topology is used along with the cascaded transistors to achieve stability with maximum gain and minimum noise figure simultaneously. High-pass input and output matching circuits are used to improve input and output return losses. The amplifier was implemented on a low-loss substrate RT/duroid with pseudomorphic high electron mobility transistor (pHEMT) technology at 1.3 GHz. The measured results of LNA exhibit a gain of 28 dB and noise figure of 0.39 dB. The input and output return losses are <10.8 dB and third-order input intercept point is 33 dBm.
Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applications
International Journal of Electrical and Computer Engineering (IJECE), 2018
The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflection coefficients lower than-20 dB and unconditional stability. Keyword: Gain Low noise amplifier (LNA) Matching Noise figure Stability
AN EXTENSIVE REVIEW ON: LOW NOISE AMPLIFIER FOR MILLIMETER AND RADIO FREQUENCY WAVES
Jurnal Teknologi, 2021
In today's world, radio receiver system is a prevailing wireless technology in that the major part is Low Noise Amplifier (LNA) which widely used to improve weak signals in many applications with millimeter and radio frequency waves such as optical communication, multimode transceivers and measurement instrumentations. The real drawbacks of LNA is that it fails to maintain specific properties in critical conditions like as minimum power consumption, provide low noise figure, input matching and linearity. Additionally, promoted by various application demands, design methods and control methods must require to improve performance of LNA. The performance of LNA can be improved by adding extra components in basic circuit by proper arrangement for millimeter and radio frequency waves. The review paper provides information about design methodology, optimization techniques and control techniques. The different design of LNA is reviewed and analyzed such as 3-stage near-mm Wave LNA, 5-stage near-mm Wave LNA, common-gate amplifier, shunt-feedback amplifier, Resistor-terminated common-source amplifier, Traditional inductor-less amplifiers, cascode connection and double common source. This review paper also provides the information about design circuit diagram. The performance improvement of LNA can be achieved with the help of different techniques and our review based on optimization and control techniques with parameter tuning. Finally, the direction for the future study is presented based on review analysis of LNA.
Design and Analysis of Low Noise Amplifier Using Active Feedback for Boundary Layer Radar
IEEE, 2014
The design of low noise amplifier (LNA) at 915MHz for boundary layer radar application is presented in this paper. An active feedback with neutralization capacitance is adopted for the design to boost the gain of the LNA. The excellent optimum tradeoff between noise figure (NF) and gain is achieved by using source degenerated inductor and input and output T-network LC tuning circuit. Source degenerated inductor is useful in achieving stability over a wide range of frequencies. To obtain optimum performance of LNA, low loss and low cost dielectric substrate RT/duroid RO4003C is used. The simulated results of LNA show that the circuit is having a noise figure of 0.233 dB which is very close to the minimum noise figure of the circuit with a gain of 21 dB. The isolation loss is less than-27 dB and the input and output return losses are less than-10 dB. LNA consumes a total power of 180 mW from 3 volts supply. Keywords-Boundary layer radar, low noise amplifier, linearity, noise figure (NF), negative feedback, ultra high frequency, wind profiling.
GaAs pHEMT broadband low-noise amplifier for millimeter-wave radiometer
Microwave and Optical Technology Letters, 2003
an appropriate low-pass filter between each antenna element. The frequency separation is, in principle, arbitrary, but the requirements on the low-pass filters in the case of closely-spaced frequency bands might increase the filters' physical length, thus complicating the layout. A solution would be to use higher permittivity substrate in order to reduce the filter dimensions.
An X-band Low Noise Amplifier Design for Marine Navigation Radars
In this paper the design of a 9.1GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA we use GaAsField-Effect Transistors (FETs) from Agilent ADS component library. Even though this transistor type is more expensive than the Si Bipolar Junction Transistor (BJT), it is preferred for its ability to achieve higher gain operation in high frequencies in comparison to the Si BJT. In order to keep the cost of the circuit low and at the same time to accomplish high performance, we design a two stages' LNA. The final design has a gain of 20.1 dB and a Noise Figureof 6.9 dB and it is appropriate for Marine Navigation RADARs by having a broadband frequency of operation.
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000
This paper describes the design and development of three advanced MMIC radiometers for different flight programs at three different frequencies, 18-34, 118, and 183 GHz. JASON is the follow-on flight mission to the Topex Poseidon breadboard and engineering model programs; IMAS is the integrated multispectaral atmospheric sounder; CMIS is the conical scanning microwave imager. The radiometers demonstrate state-of-the-art performance utilizing InP MMIC technology in reduced size, light weight packages. Recent advances in InP technology enable the use of front-end low noise monolithic microwave integrated circuit MMIC amplifiers before a MMIC-based subharmonically pumped mixer integrated into a single module. This approach was not feasible in the past to the lack of low noise amplifier technology at these frequencies. Recently however, TRW has developed and demonstrated advanced InP HEMT technology that has resulted in the first ever MMIC LNA demonstrations at these frequencies. These include a 7.2 dB gain 2-stage balanced amplifier at 190 GHz and a 15 dB gain 6stage amplifier at 215 GHz, the highest frequency gain amplifier ever demonstrated. This rapidly maturing technology has made a low noise front-end approach feasible at 183 GHz with the benefits of superior performance and lower weight and size. This paper will describe radiometers at 18-34 [3], 118 [4], and a radiometer front end amplifier at 183 GHz [5]. 2 Design and Test These radiometer designs combine MMIC chip and hybrid MIC approaches. The MMIC front end ensures minimum noise response for the Low Noise Amplifiers (LNA), while the MIC microstrip filters, transitions, detector matching, and regulation circuits minimize production costs without sacrificing noise performance. A block diagram of the 18.7 and 23.8 GHz radiometers is shown in Figure 1. Radiometer components include: waveguide input, Dicke waveguide circulator switch, waveguide isolator, waveguide-tomicrostrip transition, MMIC LNAs, a bandpass filter, matched diode detector circuit, DC amplifier, Voltage to Frequency (V/F) Converter and dc bias regulator circuitry. One design goal was to reduce radiometer size and weight without increasing cost and complexity. A block diagram of the 118 and 183 GHz radiometers are shown in Figures 2 and 3. The 112-120 GHz RF input signal is downconverted to an intermediate frequency of 4-12 GHz by use of a subharmonic mixer and local oscillator, multiplier and 60 GHz power amplifier chain. The multiplier chip takes the 15.5 GHz reference oscillator signal up to 62 GHz where the signal is amplified by the power amplifier and sent to the mixer. The key to our design is the Monolithic Microwave Integrated Circuit (MMIC) chip set which includes the following designs: frontend low noise amplifier, 3-stage balanced low noise amplifier, subharmonic pumped mixer, intermediate frequency amplifier, local oscillator amplifier and X4 frequency multiplier chip. The MMIC LNAs were voltage and current regulated using monolithic regulators and an interlock board to provide a temperature stable, constant current biasing point for FET and HEMT devices. A Micro-D connector fed the regulator power through Filtercons on the IMA wall to the IMA RF cavity via hermetically sealed feedthroughs. The LNA MMIC material is indium gallium arsenide (InGaAs) pseudomorphic high electron mobility transistor (HEMT) with a 0.15 x 80 µm T-gate geometry. This part has high yield, and resulting low production cost, and the 0.15 micron MMIC is a well established process that has been space qualified. The 20BLNA shown in Figure 4 was modified for optimal gain and noise figure at 18.7 and 23.8 GHz. Noise figure of the 18.7 GHz amplifier is less than 2.0 dB, and gain is greater than 32 dB at 18.7 GHz. Performance of the 23.8 GHz amplifier is < 2.4 dB noise figure with > 30 dB associated gain. Typical input and output return losses are less than-17 dB and-22 dB, respectively. The gain budget for each radiometer was calculated to find the gain, noise figure, and output power. Upon IMA testing, the MMIC chips were biased as required to provide the optimum noise figure and gain to meet our system requirements.
Design of a Low Noise Amplifier using AWR Microwave Office
The objective of the project is to design a Low Noise Amplifier(LNA). The amplifier is designed for different specific parameters depending on the application. Typical parameters are maximum transducer gain, output power , low noise, circuit stability. Here a LNA is designed to obtain an optimum gain with minimum noise figure for a design frequency. In the project transistor BFP 420 with a DC operating point (V ce =1.5v,I c =15ma) and designed for a maximum center frequency(f=2.4Ghz). The entire design is carried out with the AWR Microwave Office design tool,and the simulation results for each of the stages are clearly presented.
Design of Low Noise Amplifier Using Common Gate Current Reused Topology For Wind Profiling Radar
IEEE Conference, 2014
This paper presents single stage design of low noise amplifier(LNA) common gate(CG) current reused topology using pseudomorphic high electron mobility transistors(pHEMT) for wind profiling radar application at 1.3 GHz. Though CG current reused topology is not sufficient for achieving the desired parameter of LNA such as noise figure, input and output return losses and stability, so source degenerated inductor topology is also used along with the current used topology for achieving desired parameter. Low loss and low cost RT/ duroid RO4003C substrate is used. The single stage LNA results show that overall gain (S 21) of 22.149 dB and a noise figure of 0.364 dB. Input and output return losses are less than-10 dB and total power consumption is 180 mW. To perform the linearity, input intercept point (IIP3) and output intercept point (OIP3) is simulated as 31.01 dBm, 47.95 dBm respectively.
Realization and Measurement of High Frequency Low Noise Amplifier for Satellite Applications
International Journal of Engineering Development and Research, 2014
Low Noise Amplifier is an electronic amplifier used to amplify possibly very weak signals. It is usually located very close to the detection device to reduce This active antenna arrangement is frequently used in microwave systems like GPS, because coaxial cable feedline is very lossy at microwave frequencies. An LNA is a key component which is placed at the frontend of the radio receiver circuit. Using an LNA, the effect of noise from subsequent stages of the receive chain is reduced by the gain of the LNA, while the noise of the LNA itself is injected directly into the received signal. Thus, it is necessary for an LNA to boost the desired signal power while adding as little noise and distortion as possible, so that the retrieval of this signal is possible in the later stages in the system. For low noise, the amplifier needs to have a high amplification in its first stage. The four most important parameters in LNA design are: gain, noise figure and impedance matching. The design for LNA is based mainly upon the S-parameters of a transistor.
IEEE Transactions on Microwave Theory and Techniques, 2016
This paper presents a low switching-loss Dicke radiometer for W-band passive imaging systems. The equivalent switching loss introduced by the passive single-pole-double-throw (SPDT) switch in the conventional radiometer is significantly reduced by the proposed single-pole-double-throw distributed amplifier (SPDT-DA), which leads to radical improvement on the receiver's noise performance. The Dicke radiometer consisting of a SPDT-DA, a four-stage low noise amplifier (LNA) and a power detector is fully integrated in a 0.13-m SiGe BiCMOS chip. With the 0.93-dB equivalent switching loss at 91 GHz of the SPDT-DA, the total noise figure (NF) of 8.4 dB at 91 GHz is achieved by the SPDT-DA followed by the LNA. With a power consumption of 28.5 mW, the radiometer obtains an overall RF gain of 42 dB and a noise equivalent temperature difference (NETD) of 0.21 K with 30-ms integration time. The two-dimensional imaging experiment with object distance of 0.7 m is successfully carried out with the radiometer chip.
Design procedures of bipolar Low Noise Amplifier (LNA) at Radio Frequency (RF) Using S-Parameters
specialized RF design tool. The purpose of this paper is very useful for students to know the design procedures at radio frequency. It provide the academic students in the faculty of electronics and communication engineering with modern design tools and techniques, and enhance their learning by stimulating their mind through the design practice. As a result, students to be an electronic engineer will have first hand experiences and an academic proficiency in the field of RF design and simulation, with an understanding for subject content.
Design of a High Frequency and High Sensitive Low Noise Amplifier
In most applications of the microwave amplifiers not only high amplification is desirable, but the usable bandwidth is also of importance. An ordinary amplifier can’t operate at microwave ranges because of their inherent parasitic parameters and thus, it is necessary to design a microwave amplifier, which is free from above bottlenecks. This work presents the design and simulation of a High frequency low noise amplifier (LNA). with high gain, high sensitivity and low noise using Bipolar Junction transistor (BJT).. The design methodology requires analysis of the transistor for stability, proper matching, network selection and fabrication. The BFR 193 BJT Transistor was chosen for the design of the LNA due to its low noise and good gain at high frequency. These properties were confirmed using some measurement techniques including Probe, Oscilloscope and Network Analyzer for the simulation and practical testing of the amplifier to verify the performance of the designed High frequency Low noise amplifier. The design was able to fulfill the design goals of noise figure of < 1 dB, gain of 16.6 dB, Ic of 4.998 mA and receiver sensitivity of -123.95 dBm. A mathematical relationship has been derived relating the receiver’s sensitivity to the channel capacity and noise figure of the device. The design specifications for this amplifier are in high demand following the recent developments in wireless technology.