Influence of surface films on the development of pits during etching of silicon (original) (raw)

Journal of Crystal Growth, 1982

Abstract

Thin surface films on dislocation-free silicon (111) wafers grown either by prepolishing in, or floating on, HNO3-HF-CH3COOH solutions influence the development of pits during subsequent etching in conventional preferential etches (Sirtl and Secco etches). It is suggested that the etch action proceeds through holes in the film thus leading to a mechanism similar to localized corrosion in passivatable metals and alloys. Statistical analyses of the pit distributions further indicate that dislocations within the silicon do not contribute significantly to the pitting phenomenon.

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