Dielectric Capping Layers for High Efficiency Rear Passivated Silicon Solar Cells (original) (raw)

2014

Abstract

ABSTRACT The present work shows a detailed study on the formation and characterization of dielectric capping layers deposited by direct and remote plasma sources in the PECVD system. The capping layers were used in between the rear side passivation layer and the back side metal contact for high efficiency rear passivated p-type monocrystalline Si solar cells. Diverse conditions for deposition are presented and their influence on the solar cell performance is analyzed. Our dielectric layers on solar cell device are based on Air Liquide's precursors. Conversion efficiency above 19.4 % on monocrystalline p-type Cz-Si substrate is reached achieving 0.7% absolute gain compared to the reference (Al-BSF).

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