Comparison between Atmospheric and Low Pressure PECVD SiNx:Hy Coatings for Photovoltaic Applications (original) (raw)

2009

Abstract

This work is a comparative study of the optical and chemical properties of Hydrogenated Silicon Nitride films (SiNx:Hy) made with an atmospheric pressure PECVD (AP - Plasma Enhanced Chemical Vapor Deposition) process under development and an industrial Low Pressure (LP) PECVD reactor. The AP-PECVD films are deposited with a laboratory scale reactor using Ar, SiH4 and NH3 gas mixtures whereas the LP-PECVD silicon nitride is obtained in a Centrotherm reactor with NH3 and SiH4 as reactive gases. The optical parameters (refractive index and extinction coefficient) of the two silicon nitrides are compared before and after Rapid Thermal Annealing (RTA) by means of ellipsometric measurements and New Amorphous dispersion law. To compare the different chemistries of the layers, FTIR measurements are done, also before and after RTA. Si-H and N-H absorption peaks are related to the refractive index showing that the same optical properties are obtained with different chemical compositions. To finalize the comparison between LP and AP-PECVD, coatings have been processed on multicrystalline silicon solar cells.

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