General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode (original) (raw)
2021, Karadeniz fen bilimleri dergisi
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Silicon, 2021
In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d-spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.
Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes
Journal of Applied Physics, 2019
The effect of the TiO 2 interfacial layer on rectifying junction parameters of Ag/TiO 2 /n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO 2 /n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO 2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricated using aluminum as a Schottky contact and gold as an ohmic contact. The observed currentvoltage characteristics can be satisfactorily fitted using the modified Schottky equation. The current-voltage characteristics were studied to explain the rectification generation of the diode. The diode shows non-ideal I-V behavior with an ideality factor greater than unity. The conduction mechanism was determined and a Schottky-type conduction process was defined. The diode parameters such as saturation current density and ideality factor were found to be 9.28 × 10−4 A/cm2 and 6.33, respectively.
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