Synthesis and morphological studies of ZnCuTe ternary nanowires via template-assisted electrodeposition technique (original) (raw)

Electrical Properties of Electrodeposited ZnCuTe Ternary Nanowires Embedded in Polycarbonate Membrane

Nanomaterials and Nanotechnology, 2012

The electrical properties of electrodeposited zinc-copper-telluride (ZnCuTe) nanowires embedded in polycarbonate track-etch membrane (Whatman) having pore-diameters of 200, 100 and 50nm have been studied and reported in this paper. Scanning electron microscopy (SEM) confirmed the formation of the nanowires of uniform diameter equal to the diameter of the templates used. I-V measurements at room temperature (303K) reveal that the nanowires of diameter 200, 100 and 50nm have linear and ohmic characteristics. Higher electron transport was observed in larger diameter nanowires compared to smaller ones which may be attributing to size effect. The temperature-dependent electrical transport measurements over a temperature range 308-423K reveal that the temperature dependence of electrical conductivity increases with increasing temperature and decreases as the nanowires size decreases. The study reveals that ZnCuTe nanowires have negative temperature coefficient of resistance (TCR).

Synthesis and characterization of copper telluride nanowires via template-assisted dc electrodeposition route

Journal of Materials Science: Materials in Electronics, 2011

Using polycarbonate track-etch membranes (Whatman), copper telluride (Cu 1.75 Te) nanowires of diameter 100 nm and 50 nm have been synthesized electrochemically via template-assisted electrodeposition technique on indium tin oxide (ITO) coated glass from aqueous acidic solution of copper (II) sulphate (CuSO 4 Á5H 2 O) and tellurium oxide (TeO 2 ) at room temperature (30°C). Scanning electron microscopy (SEM) reveals the morphology of the nanowires having uniform diameter equal to the diameter of the template used. X-ray diffraction (XRD) pattern showed the structure corresponding to the hexagonal structure of copper telluride and single-crystalline. Using UVvisible spectrometry, the optical band gap of copper telluride nanowires was found to be 3.092 eV for 100 nm and 3.230 eV for 50 nm diameters. The photoluminescence (PL) studies shows higher intensity and broad spectrum in the blue region (450-475 nm) of visible light spectrum.

Synthesis and Characterization of Nanowires using DC Electrodeposition Technique

2014

Nanowires posses unique electrical, optical, thermo-electrical and magnetic properties which are different from their parent material. Copper and Zinc nanowires were successfully prepared by electro-deposition method using PC membrane as a template. The 25 mm diameter with varying pore diameter were used for synthesis of nanowires with simple two electrode assembly. The SEM indicates the morphology of nanowires and EDX confirmed the elemental composition of nanowires. The shape length and diameter of nanowires is characterised by the TEM. The Zinc nanowires were explored for use in sensing application. Keywords—nanowire, TEM, SEM, EDX, electro-deposition

Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor

Bulletin of Materials Science, 2013

Copper telluride (CuTe) nanowires were synthesized electrochemically from aqueous acidic solution of copper (II) sulphate (CuSO 4 •5H 2 O) and tellurium oxide (TeO 2) on a copper substrate by template-assisted electrodeposition method. The electrodeposition was conducted at 30 • C and the length of nanowires was controlled by adjusting deposition time. Structural characteristics were examined using X-ray diffraction and scanning electron microscope which confirm the formation of CuTe nanowires. Investigation for chemical sensing was carried out using air and chloroform, acetone, ethanol, glycerol, distilled water as liquids having dielectric constants 1, 4•81, 8•93, 21, 24•55, 42•5 and 80•1, respectively. The results unequivocally prove that copper telluride nanowires can be fabricated as chemical sensors with enhanced sensitivity and reliability.

Potentiostatic Deposition of ZnO Nanowires: Effect of Applied Potential and ZnCl2Concentration

In this work we report on potentiostatic deposition of Zinc oxide (ZnO) nanowires on fluorine-doped tin oxide (FTO) covered glass substrates from electroreduction of molecular oxygen. The influence of applied deposition potential, and the concentrations of zinc precursor (ZnCl2) on the properties of ZnO nanowires was investigated.SEM results revealed that ZnO nanowires electrodeposited at applied potential -0.85Vhave high density and good alignment. The diameters and densities of the electrodeposited ZnO nanowires are strongly dependent on the zinc ion concentrations and well aligned nanowires with uniform diameter can be obtained when the concentration of zinc ions is between 0.5 mM and 1 mM.

Electrochemical synthesis of vertically aligned zinc nanowires using track-etched polycarbonate membranes as templates

Physical Chemistry Chemical Physics, 2013

In the present paper, vertically aligned arrays of zinc nanowires were synthesized by electrochemical deposition into ion track-etched polycarbonate membranes in the ionic liquid electrolyte 1-ethyl-3methylimidazolium trifluoromethylsulfonate ([EMIm]TfO)/Zn(TfO) 2 . Cyclic voltammetry and chronoamperometry were performed to investigate the electrochemical growth of zinc nanowires inside of the membranes. The transport processes and mechanisms of the nanowire growth in the membranes are also discussed. A supporting zinc or copper layer was deposited on the sputtered side in order to make the back layer thick enough to stabilize the wires. Zinc nanowires with a diameter of 90 nm and a length of up to 18 mm were obtained after removing the template. Furthermore, short nanowires with lengths less than 5 mm and a sandwich-like structure with nanowires in the middle were also synthesized. Vertically aligned zinc nanowire structures on such a substrate might be a potential anode candidate for future generation lithium ion batteries.

Comparative study of ZnO and CuSCN semiconducting nanowire electrodeposition on different substrates

Journal of Solid State Electrochemistry, 2013

In this study, we are reporting on the electrochemical deposition of two kinds of semiconducting nanowires (ZnO and CuSCN) on different substrates. ZnO and CuSCN are nand p-type transparent semiconductors whose electrochemical preparation has some similarity, and it is a combination of two steps: an electrochemical reduction with consecutive chemical precipitation. Here, we show that despite the different physicochemical nature of the studied materials, when they are deposited electrochemically, their dimensions depend mainly on the surface state of the used substrate. Thus, depending on the substrate morphology, nanowires with diameters between 50 and 380 nm from both semiconductors could be grown. It is also shown that ZnO and CuSCN nanowires could be successfully grown on glass and plastic substrates as well as on a metallic one. The possibility of growing these transparent semiconductors on flexible substrates opens new perspectives for their use in "invisible" electronic devices.

Synthesis of Cu_2O and ZnO Nanowire Arrays by Electrochemical Deposition Process

cpfd.cnki.com.cn

Polycrystalline Cu 2 O nanowire arrays have been grown via porous alumina membranes using three-electrode electrochemical deposition. The effect of electrolyte, pH value, deposition potential, annealing temperature, and annealing atmosphere on the growth of Cu 2 O nanowire arrays has been investigated. On the other hand, ordered ZnO/AZO/PAM nanowire arrays have been prepared by seed layer assisted electrochemical deposition. The comprehensive of electrochemical process adopted (e.g. electrolytes, deposition parameters); various characterization techniques and the outcome of the results have been summarized in details. It is observed that the ZnO nanowire arrays are assembled into the nanochannel of porous alumina template with diameter of 120~140 nm. The crystalline structure of single ZnO nanowire is dependent on AZO seed layer. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by seed layer assisted growth mechanism.

Preparation and Properties of Cobalt Doped ZnO Nanowires

IEEE Transactions on Magnetics, 2008

The template method was used for preparing Zn 1 x Co x O nanowires with x ranging from 0.01 to 0.05. Thus, electrochemical deposition was employed for filling up the pores of polycarbonate ion track nanoporous membranes with the desired material. The method allows a good control over the morphology and composition of the deposited nanowires, as evidenced by scanning electron microscopy (SEM) and energy dispersive X ray analysis (EDX). Measurements of the magnetic properties showed a paramagnetic behavior of the nanowire arrays for the whole set of temperatures and Co concentrations.

Analysis of Copper Incorporation into Zinc Oxide Nanowires

Acs Nano, 2008

ZnO nanowires (NWs) are grown on a bulk copper half-transmission electron microscopy grid by chemical vapor deposition in a high temperature tube furnace. Photoluminescence (PL) microscopy revealed band gap emission at 380 nm and a more intense visible emission around 520 nm due to defect states in these NWs.