Phenomenological modeling of memristor fabricated through screen printing based on the structure of Ag/Polymer/Cu (original) (raw)

The attributes of a memristor such as non-volatile, simple structure, no leakage current, and fast switching speed have unfolded enormous opportunities for various analog and digital applications. It is imperative to develop an accurate physical model of the memristor in order to design digital applications. The hitherto published memristor modeling approaches do not match with the practical memristor dynamics. A new model is developed by considering Schottky contact at the metal-insulator-metal (MIM) interfaces. In this research work, a novel memristor is also fabricated to validate the proposed model. A bead polymer based on methyl methacrylate and n-butyl methacrylate (MMBM) is firstly used to explore the resistive switching properties of the device. A cost-effective screen printing technique is first demonstrated to deposit the resistive switching layer for the fabrication of the memristor. The resistive switching behavior is observed in the sandwiched layer with a silver (Ag) a...