Magnetostriction of bismuth in quantizing magnetic fields (original) (raw)

Anomalous Magnetoresistance of Single Crystals of Doped Bismuth

Measurements of magnetoresistance of single crystals of bismuth doped with tin and lead in the temperature range 100 K to 300 K are reported. Both tin and lead have a marked effect in changing the band structure of bismuth. Temperature variations show that with the increased concentration of impurity, Dr/r0 is less dependent on temperature, and the magnetic field variation of Dr/r0 does not obey the quadratic dependence on magnetic field strength.

Magnetic Properties of Single Crystals of Bismuth Doped with Lead and Tin

physica status solidi (b), 1990

Diamagnetic susceptibility in single crystals of bismuth doped with gallium and indium has been measured as a function of temperature between 100 and 300 K. Susceptibility decreases with the increase of temperature for each of the samples and also with the increase of the percentage of impurity. An attempt has been made to explain properly the observed phenomena on the basis of the large diamagnetism exhibited by valence electrons. PACS numbers: 75.20.Ck UDC 537.622.2

Transverse magnetoresistance of single crystals of bismuth doped with gallium and indium

Journal of Magnetism and Magnetic Materials, 2004

Transverse magnetoresistance in single crystals of bismuth doped with gallium and indium has been measured as functions of magnetic field up to 0.75 T and as functions of temperature between 80 and 300 K. Magnetoresistance does not obey the quadratic dependence on magnetic field strength in the low temperature limit and an approximately quadratic field dependence has been found nearly at room temperature. An attempt has been made here to explain the observed facts in these alloys of bismuth on the basis of an ellipsoidal non-parabolic band model. r

Low Field Galvanomagnetic Coefficients of Polycrystalline Bismuth at 80 °K

physica status solidi (b), 1966

Low Field Galvanomagnetic Coeffioients of Polycrystalline Bismuth at 80 OK BY Measurements h v e been reported on the galvanomagnetic J o P e ISSI, A, MOUREAU, and A, LWCKX coefficients of polycrystalline bismuth at liquid nitrogen temperature in (1, . However, these have not been extended below 200 Oe where the low field condition pH << 1 is expected to be verified. We investigated the magnetoresistance and Hall coefficients in the range 35 to 5000 Oe. The samples studied were 99.999% pure and of thicknesses ranging from 4 to 6~10'~ om. Many samples were investigated which yield the same values within 5%. The Hall. voltages were measured by means of a dc Boonton voltmeter and the increase in resistanoe with a K3 Leeda and Northrup potentiometer,

Spontaneous symmetry breaking of magnetostriction in metals with multivalley band structure

Physical Review B, 2015

We show that a first-order phase transition can take place in a metal in a strong magnetic field if an electron Landau level approaches the Fermi energy of the metal. This transition is due to the electron-phonon interaction and is characterized by a jump in magnetostriction of the metal. If there are several equivalent groups of charge carriers in the metal, a spontaneous symmetry breaking of the magnetostriction can occur when the Landau level crosses the Fermi energy, and this breaking manifests itself as a series of the structural phase transitions that change a crystal symmetry of the metal. With these results, we discuss unusual findings recently discovered in bismuth.

Magnetic field and nanostructuring effects on the thermoelectric performance of bismuth

Physical Review B, 2012

Pathways for enhancing the thermoelectric performance of bismuth at low temperatures are explored. These include applying an external magnetic field and nanostructuring. We present a theory describing the anisotropic thermoelectric properties of bismuth in terms of carrier effective masses, scattering, and band-structure characteristics obtained from experiment. It is found that the magnetic field or nanostructuring, when applied separately, can lead to significant improvements in the thermoelectric figure of merit. However, despite their beneficial yet different effects on the transport, it is shown that applying simultaneously a magnetic field and nanostructuring is not a feasible way of improving the thermoelectric performance of bismuth.

Magnetic phases of bismuth ferrite

Journal of Magnetism and Magnetic Materials, 2009

We have recently shown that BiFeO 3 has at least four different magnetic phases, contrary to the conventional wisdom. Below room temperature it undergoes spin reorientation transitions at T 2 ¼ 200 K and T 1 ¼ 140 K analogous to those in orthoferrites; and above room temperature it undergoes a structural transition near 1851C first reported by Polomska et al. This may help explain the apparent linear magnetoelectric effect at 201C reported by D. Lebeugle et al. [Phys. Rev. Lett. 100, 227602 (2008)] which is nominally forbidden due to the long wavelength cycloidal spin structure assumed. We also find evidence of an unusual acentric spin glass below ca. 200 K, related not to T N but to T 1 and T 2 .

Effects of Composition and Heat Treatment on Manganese-Bismuth Magnets

Micro & Nano Letters, 2019

Synchrotron X-ray absorption near-edge structure (XANES) spectra are used to complement X-ray diffractometry (XRD) in the phase identification of pressed manganese-bismuth (MnBi) pellets. The heat treatment at 1000°C for 10 min after the synthesis improves the ferromagnetic properties. The magnetisation and coercive field are further enhanced when the Mn:Bi ratio is raised to 2:1. The obtained magnetic properties are related to the MnBi peaks in XRD patterns as well as the Mn-edge XANES spectra. Although the spectra in the case of Mn:Bi ratio of 2:1 and 3:1 resemble that of MnO reference, the pre-edge is shifted by the contribution of zero valent Mn and the peak intensity is reduced. A variety of phases in MnBi alloys dictate their magnetic properties required for permanent magnets and desirable ferromagnetic properties are governed by the increase of MnBi phase at the expense of MnO.