Characterization of GaN and In x Ga 1− x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures (original) (raw)

Journal of Materials Science-materials in Electronics, 2003

Abstract

Structural and optical studies have been performed on GaN, InGaN layers, In0.08Ga0.92N/GaN heterostructures, In0.08Ga0.92N/In0.02Ga0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam epitaxy (MBE) on GaN templates by using transmission electron microscopy (TEM), X-ray diffraction (XRD), and photoluminescence (PL). The layers are found to be high quality with low defect density,

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