Effect of ambient on electrical and optical properties of GaN (original) (raw)

SPIE Proceedings, 2009

Abstract

Photoluminescence (PL) and surface photovoltage (SPV) of GaN layers were studied in vacuum and air ambient. SPV transients were measured with two set-ups: traditional Kelvin probe attached to an optical cryostat and atomic force microscope in contact potential mode. It is found that upward band bending in GaN decreases from its dark value of about 0.9 eV to about 0.3

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