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Miroslav Zahoran, Andrej Plecenik
Applied Surface Science, 2010
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Resistive Switching Characteristics of Tm$_{2}$O 3_{3}3, Yb$_{2}$O 3_{3}3, and Lu$_{2}$O$_{3}$-Based Metal–Insulator–Metal Memory Devices
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IEEE Transactions on Nanotechnology, 2012
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Hui-chun Huang
Thin Solid Films, 2011
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Influence of bias voltage history on conductance properties of YBaCuO/normal metal junctions
Paul Seidel
Physica C: Superconductivity, 1998
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Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
Leandro Lanosa
Journal of Applied Physics, 2015
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Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
Hangbing Lv
Applied Physics Letters, 2009
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Electrical properties, texture, and microstructure of vicinal YBa[sub 2]Cu[sub 3]O[sub 7−δ] thin films
J. Pedarnig
Applied Physics Letters, 2002
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Resistive switching in FTO/CuO–Cu 2 O/Au memory devices
haider salman
Micro & Nano Letters, 2020
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Resistive Switching Properties of a Polycrystalline TiO2 Memory Cell with a WN Buffer Layer Inserted
JuneSik Kwak
Journal of the Korean Physical Society, 2008
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Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films
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Journal of Nano-and electronic Physics, 2020
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Effects of metal electrodes on the resistive memory switching property of NiO thin films
Anass Benayad
Applied Physics Letters, 2008
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Polarity-Free Resistive Switching Characteristics of Cu x O Films for Non-volatile Memory Applications
Hangbing Lv
Chinese Physics Letters, 2008
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Performance improvement of Cu x O resistive switching memory by surface modification
Hangbing Lv
Applied Physics A, 2011
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Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices
Terry Alford
2010
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Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Yuchao Yang
Progress in Natural Science: Materials International, 2010
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Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application
Hangbing Lv
IEEE Electron Device Letters, 2000
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Properties of YBa/sub 2/Cu/sub 3/O/sub 7/ thin films deposited on substrates and bicrystals with vicinal offcut and realization of high I/sub c/R/sub n/ junctions
Michael Faley, Yuriy Divin
IEEE Transactions on Appiled Superconductivity, 2001
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Electrical properties, texture, and microstructure of vicinal YBa/sub 2/Cu/sub 3/O/sub 7- delta / thin films
J. Pedarnig
Applied Physics Letters
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Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Ijaz Talib
Materials Science in Semiconductor Processing, 2015
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Improving the electrical performance of resistive switching memory using doping technology
Hangbing Lv
Chinese Science Bulletin, 2012
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The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devices
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Thin Solid Films, 2018
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Effect of crystalline state on conductive filaments forming process in resistive switching memory devices
Hosameldeen Elshekh
Materials Today Communications, 2019
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In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Woo Young Yang
Advanced Materials, 2011
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Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films
Carlos Rosário
Applied Physics Letters, 2018
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Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
Young Do
Thin Solid Films, 2010
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Field dependent alternating current susceptibility of metalorganically deposited YBa[sub 2]Cu[sub 3]O[sub 7−δ] films
Milko Iliev
Journal of Applied Physics, 2007
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Bipolar resistive switching on Ti/TiO2/NiCr memory cells
Eric Noé Hernández Rodríguez
Superficies y Vacío, 2017
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Anisotropic defect structure and transport properties of YBa[sub 2]Cu[sub 3]O[sub 7−δ] films on vicinal SrTiOsub 3
H. Fuess, Joachim Brötz
Journal of Applied Physics, 1999
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Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory
zahida batool
Materials Research Express, 2019
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High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures
Kenji Itaka
Advanced Materials, 2007
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Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization
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Journal of Applied Physics, 2009
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Oxygen content and inhomogeneity effects on the electrical properties of YBa2Cu3Oy thin films
M. Varela
Journal of Materials Research, 1997
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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
SUBHRANU SAMANTA
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Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell
Hangbing Lv
Applied Physics A, 2011
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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Ziaur Rahaman
Nanoscale Research Letters, 2012
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