The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals (original) (raw)

2004, The European Physical Journal Applied Physics

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Some peculiarities of exciton luminescence of zinc oxide single crystals and powders

Journal of Luminescence, 2003

The new bands have been observed in the secondary emission spectrum of ZnO single crystals under near-resonance excitation. The energy position and the polarization behavior of these lines have been interpreted in terms of a resonant polariton-polariton scattering model. In the emission spectra of ZnO powders of different crystallite size, the manifestation of polariton-polariton interaction has not been detected. The quantum size effect was observed. r

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

Physical Review B, 2011

ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to deeply bound excitons (Y lines). In this work, we present a comprehensive study of the properties of the deeply bound excitons with particular focus on the Y 0 transition at 3.333 eV. The electronic and optical properties of these centers are compared to those of the shallow impurity related exciton binding centers (I lines). In contrast to the shallow donors in ZnO, the deeply bound exciton complexes exhibit a large discrepancy between the thermal activation energy and localization energy of the excitons and cannot be described by an effective mass approach. The different properties between the shallow and deeply bound excitons are also reflected by an exceptionally small coupling of the deep centers to the lattice phonons and a small splitting between their two electron satellite transitions. Based on a multitude of different experimental results including magnetophotoluminescence, magnetoabsorption, excitation spectroscopy (PLE), time resolved photoluminescence (TRPL), and uniaxial pressure measurements, a qualitative defect model is developed which explains all Y lines as radiative recombinations of excitons bound to extended structural defect complexes. These defect complexes introduce additional donor states in ZnO. Furthermore, the spatially localized character of the defect centers is visualized in contrast to the homogeneous distribution of shallow impurity centers by monochromatic cathodoluminescence imaging. A possible relation between the defect bound excitons and the green luminescence band in ZnO is discussed. The optical properties of the defect transitions are compared to similar luminescence lines related to defect and dislocation bound excitons in other II-VI and III-V semiconductors.

Localized excitons mediate defect emission in ZnO powders

Journal of Applied Physics, 2013

A series of continuous-wave spectroscopic measurements elucidates the mechanism responsible for the technologically important green emission from deep-level traps in ZnO:Zn powders. Analysis of low-temperature photoluminescence (PL) and PL excitation spectra for bound excitons compared to the temperature-dependent behavior of the green emission reveals a deep correlation between green PL and specific donor-bound excitons. Direct excitation of these bound excitons produces highly efficient green emission from near-surface defects. When normalized by the measured external quantum efficiency, the integrated PL for both excitonic and green emission features grows identically with excitation intensity, confirming the strong connection between green emission and excitons. The implications of these findings are used to circumscribe operational characteristics of doped ZnO-based white light phosphors whose quantum efficiency is almost twice as large when the bound excitons are directly excited. V C 2013 American Institute of Physics. [http://dx.

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