A SPICE MODEL OF THE PEO-PANI MEMRISTOR (original) (raw)
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Generalized Memristive Device SPICE Model and its Application in Circuit Design
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This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large circuits with up to 256 memristors, and was less likely to cause convergence errors when compared to other models. We show that the model can be used to study the impact of memristive device variation within a circuit. We examine the impact of nonuniformity in device state variable dynamics and conductivity on individual memristors as well as a four memristor read/write circuit. These studies show that the model can be used to predict how variation in a memristor wafer may impact circuit performance.
Study of Memristor Models and Its Applications in Logic Circuits
One significant area of nanotechnology is nanoelectronics and a recent development in nanoelectronics is the discovery of the memristor, a fundamental circuit element. A memristor is essentially a nonvolatile nanoscale programmable resistor whose resistance, or memristance to be precise, is changed by applying a voltage across or current through, the device. Memristor has the potential to replace transistors in the digital circuit of upcoming days. Research is in full swing to find the compatibility of this device with existing CMOS technology. Throughout this paper such possible application of the memristor is investigated through SPICE simulation. The initial goal of the paper was to simulate the device characteristics. The secondary goal was to make circuits with the device. Standardization of device model is a big problem in memristor research, which is why a comparison of various models is also presented in this work. The paper has ended with a summary of our work done and possible scopes for future work.
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In this paper, a unified and open linear technology simulation program with integrated circuit emphasis (LTSPICE) memristor library is proposed. It is suitable for the analysis, design, and comparison of the basic memristors and memristor-based circuits. The library could be freely used and expanded with new LTSPICE memristor models. The main existing standard memristor models and several enhanced and modified models based on transition metal oxides such as titanium dioxide, hafnium dioxide, and tantalum oxide are included in the library. LTSPICE is one of the best software for analysis and design of electronic schemes. It is an easy to use, widespread, and free product with very good convergence. Memristors have been under intensive analysis in recent years due to their nano-dimensions, low power consumption, high switching speed, and good compatibility with traditional complementary metal oxide semiconductor (CMOS) technology. In this work, their behavior and potential application...
Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation
Proceedings of the IEEE, 2000
This paper presents SPICE ready circuit models that system designers can use to accurately measure the behavior of memristor-based large systems. ABSTRACT | The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic circuitry through to advanced memory applications. The nanometer-scale feature of the device creates a new opportunity for realization of innovative circuits that in some cases are not possible or have inefficient realization in the present and established design domain. The nature of the boundary, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor intro-duces challenges in modeling, characterization, and simulation of future circuits and systems. Here, a deeper insight is gained in understanding the device operation, leading to the development of practical models that can be implemented in current computer-aided design (CAD) tools.
Chapter 12 Memristor SPICE Modeling
2012
Modeling of memristor devices is essential for memristor based circuit and system design. This chapter presents a review of existing memristor modeling techniques and provides simulations that compare several existing models to published memristor characterization data. A discussion of existing models is presented that explains how the equations of each relate to physical device behaviors. The simulations were completed in LTspice and compare the output of the different models to current–voltage relationships of physical devices. Sinusoidal and triangular pulse inputs were used throughout the simulations to test the capabilities of each model. The chapter is concluded by recommending a more generalized memristor model that can be accurately matched to several different published device characterizations. This generalized model provides the potential for more accurate circuit simulation for a wide range of device structures and voltage inputs. 12.
Journal of Circuits, Systems, and Computers, 2010
Memristor had been¯rst theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO 2 =TiO 2ÀX structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are brie°y reviewed and then two general SPICE models for the charge-controlled and°ux-controlled memristors are introduced for the¯rst time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an arti¯cial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented. . Downloaded from www.worldscientific.com by LOUISIANA STATE UNIVERSITY TROY H MIDDLETON LIBRARY -SERIALS DEPARTMENT on 11/29/12. For personal use only.
— While hardware in a computer have developed greatly, users still has faced problems with its speed, and memory in terms of its performance. The recent developments in memristors made it possible to reduce the problems, as memristive models have been be designed to suit the requirements of time. However, different characteristics are expected from memristors depending upon its applications. The paper aims to compare three major models of memristors focusing on their advantages and limitations. It identifies the most suitable model of memristor that satisfies the memristive device conditions. Out of the three models, Voltage threshold adaptive memristor model (VTEAM) fits into the requirements and it has sufficient accuracy and computational efficiency. Keywords— Memristors, VTEAM, Threshold Adaptive Memristor Model, Boundary Condition Model
1 SPICE Modeling of Memristor and Memristive Systems : A Review
2014
Memristor, the fourth fundamental passive circuit element, was first postulated by Prof. Leon Chua in 1971. Physical implementation of novel device Memristor and its mathematical model was first demonstrated by HP Labs research team in 2008.Memristor is getting a considerable attention due to its diversified areas of applications from computing to neuromorphic areas. For its reliable implementation in complex circuits various models are discussed. This paper is a brief review on Memristive systems such as current controlled Memristive system (CCMS) and voltage controlled Memristive system (VCMS). A comparative study of different SPICE modeling of memory resistor (Memristor):Non-linear dopant drift model, linear dopant drift model is discussed in this paper.
Implementation of Memristor circuits using LTspice
Memristor as a fourth fundamental circuit element was first postulated by Prof. Leon Chua in 1971.The physical implementation of this device was developed by HP team in 2008.Thereafter memristor as a fundamental circuit element has shown tremendous potential for development of analog and digital circuit. To design circuits with memristors, it is essential to understand the memristor behavior with a simulator.SPICE is a general purpose simulator which is used in the analysis of integrated circuits. This paper will discuss memristor behavior with LTspice simulator which is a popular version of SPICE and implement Memristor model for the analysis of MC(Memristor Capacitor) circuits. Index Terms: Memristor, LTspice, MC circuits
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Memristor is a novel device which act as forth fundamental circuit element envisioned by Prof. Chua in 1971. Memristor devices has great interest in research ranging from memory and logic to neuromorphic systems due to its several advantages: nonvolatality, good scalability, compatibility with CMOS technology. We study the ongoing models of memristor and compare them with known device specifications In the process of Memristor modelling using finite element, there is initial innovative approach is to implement basic model of it with the help of device modeling and simulation tool Comsol multiphysics 4.4. The successful modeling and simulation of Memristor will further lead to use for SPICE based circuit design. KeywordsComsol multiphysics 4.4, SPICE, Memristor