Interfacial Atomic Number Contrast in Thick TEM samples (original) (raw)

A novel method for simulating electron scattering at the interface between two different materials in thick samples is proposed. Utilizing Scanning Transmission Electron Microscopy (STEM) with a High Angle Annular Dark-Field (HAADF) detector, this study reveals increased detector intensities at the interface of high-density and low-density materials. The simulation, conducted using Python, is compared with experimental findings, demonstrating significant implications for studying thick TEM samples, especially those prepared via Focused Ion Beam (FIB) techniques.