Effects of Morphology and Doping on the Electronic and Structural Properties of Hydrogenated Silicon Nanowires (original) (raw)

Structural properties and magic structures in hydrogenated finite and infinite silicon nanowires

Applied Physics …, 2007

Unusual effects such as bending and "canting," related with the stability, have been identified by ab initio real-space calculations for hydrogenated silicon nanowires. We have examined in detail the electronic and structural properties of finite and infinite nanowires as a function of length ͑and width͒ and have developed stability and bending rules, demonstrating that "magic" wires do not bend. Reconstructed 2 ϫ 1 nanowires are practically as stable as the magic ones. Our calculations are in good agreement with the experimental data of Ma et al. ͓Science 299, 1874 ͑2003͒.͔.

Effect of HCl on the doping and shape control of silicon nanowires

Nanotechnology, 2012

The introduction of Hydrogen Chloride during the in-situ doping of Silicon Nanowires (SiNWs) grown using the Vapour Liquid Solid (VLS) mechanism was investigated. Compared with non-chlorinated atmospheres, the use of HCl with dopant gases considerably improves the surface morphology of the SiNWs, leading to extremely smooth surfaces and a greatly reduced tapering. The variations in the wire diameter are massively reduced for boron doping, and can not be measured at 600°C for phosphorous over several tens of micrometers. This remarkable feature is accompanied by a frozen gold migration from the catalyst, with no noticeable levels of gold clusters observed using scanning electron microscopy. A detailed study of the NWs apparent resistivity reveals that the dopant incorporation is effective for both types of doping. An abacus linking the apparent resistivity to the dopant to silane dilution ratio is built for both types of doping and discussed in the frame of the previous results.

H2-assisted control growth of Si nanowires

Journal of Crystal Growth, 2003

Large-scale desired silicon nanowires without amorphous silicon oxide sheath have been synthesized by thermal chemical vapor deposition using SiH4 gas at 650°C in a flow mixture of H2 and N2, compared with the short and thick Si nanowires with amorphous SiOx coating obtained in N2. Scanning electron microscopy (SEM), Energy dispersive X-ray spectrometry (EDX) analysis, and high-resolution transmission electron microscopy