Low voltage complementary organic inverters (original) (raw)

High mobility n-channel organic thin-film transistors and complementary inverters

Journal of applied …, 2005

We report on n-channel organic thin-film transistors ͑OTFTs͒ with field-effect mobility comparable to that typically reported for p-channel OTFTs fabricated from pentacene. The OTFTs were fabricated on oxidized silicon wafers using N , NЈ-ditridecylperylene-3,4,9,10-tetracarboxylic diimide ͑PTCDI-C 13 H 27 ͒ as the semiconductor and with Au, Cr, Al, and LiF / Al source and drain contacts. Accumulation mode n-channel transistor operation is demonstrated for all contact metals despite the large differences in their work functions. High field-effect mobility near 0.6 cm 2 / V s and large I on / I off of 10 7 were achieved. Device performance is sufficient to demonstrate pentacene/ PTCDI-C 13 H 27 TFT complementary inverters with record gain.

Vertically stacked complementary inverters with solution-processed organic semiconductors

Organic Electronics, 2011

We report on vertically stacked complementary inverters implemented with a solutionprocessed [6,6]-phenyl c 61 butyric acid methyl ester (PCBM) n-channel thin-film transistor (TFT) fabricated on top of a 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and poly(triarylamine) (PTAA) blend p-channel TFT. With a shared common gate electrode positioned between two dielectric layers, bottom-contact p-and top-contact n-channel TFTs showed saturation mobility values of 0.25 and 0.004 cm 2 /V s and threshold voltages of À3.9, and 0.3 V, respectively. The inverter yielded a gain value of À24 V/V with a switching threshold voltage value of 3.3 V at a supply voltage of 7 V. This demonstration of the use of solution-processed semiconductors in a vertically stacked complementary inverter geometry is a step forward towards the development of low-cost complementary electronics.

Development of a hybrid inverter through integration of organic and inorganic thin film transistors

Thin Solid Films, 2010

This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues. Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: http://www.elsevier.com/copyright Author's personal copy Development of a hybrid inverter through integration of organic and inorganic thin film transistors

High-Performance Low Voltage Organic Thin-Film Transistors

2005

In this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 µs is calculated from experimental results.

Novel organic inverters with dual-gate pentacene thin-film transistor

Organic Electronics, 2007

We report on the fabrication and characterization of dual-gate pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 as a bottom-gate dielectric and PEALD 200 nm thick Al 2 O 3 as a top-gate dielectric. The V th of dual-gate OTFT has changed systematically with the application of voltage bias to top-gate electrode. When voltage bias from À10 V to 10 V is applied to top gate, V th changes from 1.95 V to À9.8 V. Two novel types of the zero drive load logic inverter with dual-gate structure have been proposed and fabricated using PEALD Al 2 O 3 gate dielectrics. Because the variation of V th due to chemical degradation and the spatial variation of V th are inherent in OTFTs, the compensation technology by dual-gate structure can be essential to OTFT applications.

Organic thin film transistors characteristics parameters, structures and their applications

2011

The differences in drain current and drain voltage characteristics of top gate and bottom gate Organic Thin Film Transistor (OTFT) structures are analyzed by two dimensional numerical device simulators. Further discussion shows different characteristics parameters of OTFTs. Transistor based on organic semiconductor (conjugated or conducting polymers) as active layer to manage electric current flow is known as OTFTs. The performance parameters of OTFTs are evaluated from output and transfer characteristics of different structures of OTFTs. Device characteristics parameters have been evaluated in terms of drain current, mobility, on/off current ratio, threshold voltage, subthreshold slope and transconductance. OTFTs are considered as promising device for future development of their various applications in the areas of low-cost and large-area electronics. Further this paper thoroughly discusses the overall performance and applications of OTFTs in various fields.

Organic Thin Film Transistor Architecture, Parameters and their Applications

Organic Thin Film Transistors (OTFTs) are promising devices for future development of variety of low-cost and large-area electronics applications such as flexible displays. This paper analyzes the performance of OTFT made of several organic semi conducting and insulating materials and further discusses their applications. Analysis of previous research work demonstrates that the mobility in OTFT decreases when the product of semi conducting film thickness and gate capacitance per unit area increases. The decrease is specified by a power law function with parameters for several organic semiconductors. OTFT characteristics have undergone spectacular improvements during the last few years. This paper explores the effect of variation of channel length from 40 nm to 20 nm on drain current for pentacene bottom contact structure. Variations in these quantities maps to variations in the electrical behaviour of devices. It has been found that drain current increases due to decrease in length of organic thin film conducting channel. It reviews recent progress in parameter properties for device designs and applications related to OTFTs. The performance of OTFTs is evaluated in terms of mobility, on/off current ratio, threshold voltage and sub threshold slope. This paper thoroughly discusses the overall performance and applications of OTFTs in various fields.

Organic thin-film transistors: A review of recent advances

IBM Journal of Research and …, 2001

In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. We also review in more detail related work that originated at IBM during the last four years and has led to the fabrication of highperformance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.

Dual Threshold Voltage Organic Thin-Film Transistor Technology

IEEE Transactions on Electron Devices, 2010

A fully photolithographic dual threshold voltage (V T) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The nearroom-temperature (≤ 95 • C) process produces integrated dual V T pentacene-based p-channel transistors. The two V T 's are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount ΔV T. The availability of a high-V T device enables area-efficient zero-V GS high-output-resistance current sources, enabling high-gain inverters. We present positive noise margin inverters and rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest supply voltages reported for OTFT circuits. These results show that integrating n-and p-channel organic devices is not mandatory to achieve functional area-efficient low-power organic integrated circuits.