Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors (original) (raw)

Abstract

We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO3 nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO3 nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to 37 vol %) with a large capacitance density and a low leakage current (10-8 A/cm2). The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio (Ion/off 104-106) due to the high capacitance density and small leakage current of the gate insulator.

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