An optical memory cell based on Erbium-doped fiber (original) (raw)

All-optical regenerative memory with full write/read capability

1998

We demonstrate an all-optical regenerative memory with the capability to write and read optical pulses at any time slot in an optical fibre delay line. The memory architecture comprises three TOAD optical switching gates. q 1998 Elsevier Science B.V. All rights reserved.

Design of all-optical read-only memory

Applied Optics, 2009

A semiconductor optical amplifier-based all-optical read-only memory (ROM) is successfully demonstrated through simulations using a one-level simplification method optimized for optical logic circuits. Design details are presented, and advantages are discussed in comparison with an all-optical ROMemploying decoder. We demonstrate that eight characters can be stored at each address in the American Standard Code for Information Interchange.

Implementation of 1-Bit Random Access Memory Cell in All-Optical Domain with Non-linear Material

International Journal of Optics and Applications, 2011

This paper demonstrates an all-optical 1-bit Random Access Memory (RAM) with massive use of nonlinear material. All-optical switching mechanism is exploiting here to realize the all-optical 1-bit RAM. The all-optical switch by a composite slab of linear medium (LM) and non-linear medium (NLM) is the building block of our proposed 1-bit RAM circuit. An all-optical clocked D flip flop is the main storing element of the RAM. These circuits are simple and all-optical in nature. It can also gear up to the highest capability of optical performance in high-speed all-optical data storing, computing and communicating system.

Multistate optical memory based on serially interconnected lasers

IEEE Photonics Technology Letters, 2000

A multistate optical memory based on serially interconnected lasers is presented. We show that only one of the lasers can lase at a time, thus, the state of the optical memory is determined by the wavelength of the dominant laser. The light from the dominant laser suppresses its neighboring lasers through gain saturation, but still receives amplification by the active element of the suppressed lasers, compensating for coupling losses. This light passes through each of the successive lasers, simultaneously suppressing and being amplified. By this mechanism, all other lasers are suppressed. A five-state optical memory based on this concept is experimentally demonstrated. The contrast ratio between different states is over 30 dB. Dynamic flip-flop operation based on two different all-optical switching methods is also demonstrated.

Optical Static RAM Cell

IEEE Photonics Technology Letters, 2009

We demonstrate an optical static random access memory cell that provides read and write functionality at 5 Gb/s. The circuit comprises a hybridly integrated semiconductor optical amplifier-Mach-Zehnder inteferometer (SOA-MZI) flip-flop serving as the memory unit and two additional SOA-based cross-gain modulation switches for controlling access to the memory cell.

SOA Fiber Ring Laser-Based Three-State Optical Memory

IEEE Photonics Technology Letters, 2000

By exploiting three coupled semiconductor optical amplifier (SOA) fiber ring lasers, a compact, integratable, and polarization-independent three-state all-optical memory is demonstrated, with 40-dB extinction ratio for each state. Dynamic flip-flop operation between states is also demonstrated with switching pulse energy of 13.6 nJ. Due to the broad bandwidth of SOA gain spectrum, the wavelength range of set pulses is large. Finally, the transition behavior of state switching is investigated.

A fast low-power optical memory based on coupled micro-ring lasers

Nature, 2004

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 x 40 microm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Design for an optical random access memory

Applied Optics, 1989

Cascadable optically nonlinear arrays of logic devices interconnected with space invariant optical components are proposed for the core memory of a digital computer. Access time to any portion of the memory is O(log 2 N) gate delays for logic devices with fan-in and fan-out of two, where Nis the size of the memory in bits. The cost of the design in switching components is near minimal for a random access memory (RAM) between one and two components per stored bit of information depending on the size of the memory. The design is extensible to very large RAMs, although parallel access memory is preferred to a RAM configuration for large memories due to the parallel access capability of the optical design.