Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: Growth on (113) oriented substrates (original) (raw)

2008, Diamond and Related Materials

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. ]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 ]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), and faces normalized to that of the (100) faces, respectively α, β, and γ. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of α, β, γ, and deposition time.