GaAs quantum dot structures (original) (raw)

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

2008

Electroreflectance studies of InAs quantum dots with In[sub x]Ga[sub 1−x]As capping layer grown by metalorganic chemical vapor deposition

Jen-inn Chyi

Applied Physics Letters, 2005

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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Bouraoui ILAHI

Applied Physics A, 2005

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Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

Laura Lazzarini

Journal of Applied Physics, 2002

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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures

Aditya Patel

Superlattices and Microstructures, 2013

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Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

Ingri Jazmin Guerrero Moreno

Superlattices and Microstructures, 2014

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Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

manel souaf

Materials, 2015

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Quantum dot strain engineering of InAs/ InGaAs nanostructures

Luca Seravalli

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Influence of InxGa1−xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

Khamim Ismail

Jurnal Fisika dan Aplikasinya, 2010

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Structural and physical properties of InAlAs quantum dots grown on GaAs

Felicia Iacomi

Physica B-condensed Matter, 2018

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Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy

Richard Arès

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Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers

Richard Arès, Denis Morris, Bouraoui ILAHI

Journal of Crystal Growth, 2013

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Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

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Strain Reduction and Long Wavelength Emission from InAs/GaAs Quamtum Dots by Using Growth Interruption in Molecular Beam Epitaxy

Pablo Vaccaro

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High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

BAOLAI LIANG

Journal of Applied Physics

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Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature

Vincent Wong

Journal of Crystal Growth, 2011

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The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures

Luca Seravalli

Applied Physics Letters, 2003

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Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

sasikala ganapathy

Applied Physics Letters, 2003

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Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Larbi Sfaxi

International Journal of Spectroscopy, 2011

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Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers

Ricardo Cisneros Tamayo

Superlattices and Microstructures, 2018

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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

Sasikala Ganapathy

Journal of Applied Physics, 2002

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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

Larbi Sfaxi

Journal of Luminescence, 2012

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Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1−xNx capping layer

Stefan Birner

Physical Review B, 2005

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In-based quantum dots on AlxGa1−xAs surfaces

Gottfried Strasser

Microelectronic Engineering, 2007

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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Itaru Kamiya

Journal of Applied Physics, 2015

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InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Dieter Bimberg

Japanese Journal of Applied Physics, 1997

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Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 mu m-1.5 mu m) optical applications

muhammad usman

2009

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Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Bouraoui ILAHI

Journal of Luminescence, 2007

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Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3µm-1.5µm) optical applications

Dragica Vasileska

2008

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Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures (original) (raw)

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