Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy : Cross correlation between structural and optical properties (original) (raw)
Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.
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Journal of Applied Physics, 2009
High-quality coalescence overgrowth of patterned-grown GaN nanocolumns on c-plane sapphire substrate with metal organic chemical vapor deposition is demonstrated. Although domain structures of a tens of micron scale in the overgrown layer can be identified with cathodoluminescence measurement, from atomic force microscopy (AFM) measurement, the surface roughness of the overgrown layer in an area of 5×5 μm2 is as small as 0.411 nm, which is only one-half that of the high-quality GaN thin-film template directly grown on sapphire substrate (the control sample). Based on the AFM and depth-dependent x-ray diffraction measurements near the surface of the overgrown layer, the dislocation density is reduced to the order of 107 cm−2, which is one order of magnitude lower than that of the control sample and two to three orders of magnitude lower than those of ordinary GaN templates for fabricating light-emitting diodes. Also, the lateral domain size, reaching a level of ∼2.7 μm, becomes three...
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