Accurate carrier profiling of n-type GaAs junctions (original) (raw)

Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si (100)

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Characterization of Gaas/Si/GaAs Heterointerfaces

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Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999

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DETERMINATION OF CARRIER PROFILES ON BEVELLED GaAs STRUCTURES BY PCIV METHOD

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SIMS characterization of GaAs MIS devices at the interface

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Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

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Infrared techniques for semiconductor characterization

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OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge

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1998

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A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices

David A. J. Moran

2009

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Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry

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