Design considerations for the gate circuit in distributed amplifiers (original) (raw)
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Lumped-element analysis and design of CMOS distributed amplifiers with image impedance termination
Microelectronics Journal, 2006
This paper presents a systematic matrix-based lumped-element analysis of CMOS distributed amplifiers (DAs). Since transmission lines (TLs) of the DAs are artificially constructed from a ladder of a finite number of inductors and capacitors, the conventional TLbased analysis of microwave DAs can not be accurately applied to CMOS DAs. The proposed lumped-analysis method is also more intuitive for analog circuit designers than the TL analysis adapted from microwave amplifiers analysis because it provides the performance characteristics of the amplifiers as functions of circuit elements values, and not the TL characteristics. The image impedance technique is used for the design of input/output terminating networks. A new image impudence matrix is defined to accommodate the extension of the theory from two-to four-port networks, and a practical realization of the image impedance matrix is presented using the available circuit elements in CMOS technology. The simulation results clearly indicate an improved voltage gain and a better gain uniformity over the bandwidth of the proposed DA design terminated at its image impedance compared with the amplifier terminated at its nominal TL characteristics impedance. r
Design, Analysis and Simulation of a Linear Phase Distributed Amplifier
Journal of Communication Engineering, 2019
In this paper a new method for the design of a linear phase distributed amplifier in 180nm CMOS technology is presented. The method is based on analogy between transversal filters and distributed amplifiers topologies. In the proposed method the linearity of the phase at frequency range of 0-50 GHz is obtained by using proper weighting factors for each gain stage in cascaded amplifier topology. These weighting factors have been extracted using MATLAB software. Finally, by plotting the frequency response of the amplifier resulted from MATLAB code and also simulation from ADS, the phase linearity of the designed amplifier is shown.
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FDTD analysis of distributed amplifiers based on the fully distributed model
2007 Asia-Pacific Conference on Applied Electromagnetics, 2007
In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.
A study of the frequency response of a single stage common emitter amplifier, emitter –coupled amplifier and multistage distributed amplifier is carried out. In this work, a single stage common emitter amplifier is designed. Two such amplifiers were connected in a differential pair and designed. In this second design, the coupling between the stages is provided by the emitter resistor which carries the combined currents of the pair. From the previous stages, the multistage distributed amplifier was also designed. Such an arrangement employs two transmission lines, one for the input and the other for the output. Results obtained from simulation exercise indicate significant improvement in the gain, bandwidth and gain bandwidth product of the distributed amplifier.
A practical approach based on a unilateral FET model for the design of a MMIC distributed amplifier
Microwave and Optical Technology Letters, 1996
highly effective for reducing the error present in the physical-optics diffraction coefficients. -5 -10-m Figure 4 Convergence of the physical-optics diffraction coefficients f J w ) to the exact pattern p J w ) of E = 53 as E increases from 2 to 1000 for 0, = 60", 8, = 300", and 0, = 330" Receirled 2-15-96; recised 3-29-96 ABSTRACT A new formulation for a unilateral FET model suitable for designing MMIC distributed amplijiers (design-oriented FET model) is proposed.
A 20-Stage CMOS Distributed Amplifier using CMOS Interconnects for Artificial Transmission Lines
2006 49th IEEE International Midwest Symposium on Circuits and Systems, 2006
This paper presents an area-efficient 20-stage distributed amplifier implemented in 0.18 ,um CMOS process. To implement the artificial transmission line of the distributed amplifier, single-wire CMOS interconnects are employed instead of conventional on-chip spiral inductors. Based on this technique the area of CMOS DA is minimized to 0.4 mm2. Implemented DA exhibits a gain of 9 dB and a unity gain bandwidth of 27 GHz. Input and output return losses are less than 12 and 8 dB, respectively.
High Efficiency Distributed Amplifier Using Optimum Transmission Line
2007 European Conference on Wireless Technologies, 2007
In this paper, we performed numerical analysis on reversed current of distributed amplifier (DA) based on transmission line theory and proposed optimum transmission line (OTL) to cancel reversed currents. This OTL has improved electrical performances of DA. The distributed amplifier using optimum transmission line (DAOTL) has been implemented with pHEMT transistor. Due to high capacitance of pHEMT, cutoff frequency is decided to 3.6GHz. As a result of measurement, we could obtain maximum gain of 14.5dB and minimum gain of 12.8dB inner operation band. Moreover, we could PAE of 25.6% which is higher about 7.6% than the conventional DA (CDA) at 3GHz. The output power was obtained 10.9dBm which is higher about 1.7dB than the conventional at 3GHz.
Analysis of a bilateral distributed amplifier using scattering parameters
Microwave and Optical Technology Letters, 2003
A formulation for the bilateral distributed amplifier network using a normalized transmission matrix approach is proposed in this letter. The analysis takes into consideration the effect of Cgd in the active device. Our approach is compared to the theoretical predictions for the unilateral case and measured results. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 120–122, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10693
A novel application in matrix distributed amplifier: The forward-feed
Microwave and Optical Technology Letters, 1990
This article describes a modification of the matrix distributed amplifier, which yields a wider frequency response employing the forward-feed method. A detailed study has been developed and we have found some original results. A new circuit configuration that optimizes the performance of the device is presented.