Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models (original) (raw)
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High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band
Several millimeter-wave MMICs were fabricated successfully using 0.16 μm pseudomorphic MODFET technology. A five-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrowband three-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz*dB
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2012
Operations in the 60 GHz band have many potential advantages compared to other unlicensed frequency bands including the availability of large bandwidth (7 GHz) and high-transmission power levels. In order to utilize this plentiful resource, it is necessary to study the MOSFET devices at 60 GHz for developing high efficiency low noise amplifier and oscillators. The modeling is mainly based on substrate resistance to improve the operating frequency. π-type substrate resistance model of RF MOSFETs are used as composite model for MOSFET. In composite model, core transistor is modeled using BSIM4 and substrate network is added to it. The functionality of this composite model is verified by comparing with that of conventional MOSFET. To study the impact of substrate network, a 60 GHz LNA is constructed. Conventional LNA is designed first and later MOSFET in that LNA are replaced with composite model and comparing performances in both the cases. Within the range of designs, the impact of π...
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This paper presents a design of double stage low noise amplifier with cascoded LNA using inductive drain feedback that is applicable for the IEEE 802.16 standard (WiMAX) which operates at 5.8 GHz. The amplifier uses FHX76LP superHEMT low noise FET. The Ansoft Designer SV was used during the design process. The double stage LNA with cascoded LNA was designed using the inductive drain feedback, inductive generation to the source, and the T-network at the input and output terminal as a matching technique. The double stage LNA and cascoded low noise amplifier (LNA) produced a gain (S21) of 60.36 dB and the noise figure (NF) of 0.93 dB. The input reflection (S11), output reflection (S22) and return loss (S12) are -11.03 dB, -12.30 dB and -73.78 dB respectively. The measured 3dB bandwidth of 1.27 GHz has been achieved. The input sensitivity is -92 dBm exceeded the standards required by the IEEE 802.16.
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2015
Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise amplifier (LNA) at 60 GHz using the channel charging resistance model has been done.Small signal gain and noise figure using the channel charging resistance model has been derived and analysed. The proposed LNA circuit uses various multi-gate MOSFET structures and the results are compared with conventional MOSFET based design. The designed LNA using a Quadruple Gate structure exhibited the noise figure improvement of 24.4% and 42.79% when operated at 1 V and 1.5 V respectively. Also the corresponding gain increases by 2.38 times and 4.9 times compared with conventional single gate MOSFET design.
High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
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