Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement (original) (raw)

An ultra-low-noise Source-Measuring Unit for semiconductor device noise characterization

2010

This work presents an automated measurement system designed and realized in order to perform low-frequency noise measurements on MOSFET devices with the easy of use and programmability of a Source-Measuring Unit (SMU). The designed instrument is made up mainly by two parts, an analog part that bias the Device Under Test and amplifies its signals, and a digital part that allows to reconfigure, according to the measurement needs, the analog part in a remote driven way. Thus, it was possible to integrate the designed system in a wafer-level measurement system, provided with a dedicated software, in order to perform, in a completely automated way, various set of noise measurements that could require even large amounts of time. Moreover for completeness of the measurement system, in order to allow the user to check out the DUT's integrity and measure its I/V curves (as required before performing any noise measurement) the designed system allows even to perform a static characterization using a dedicated software that has been integrated in the noise measurement Virtual Instrument. With this solution, the use of a parameter analyzer and a switch matrix can be avoided, thus positioning the instrument on the prober shelf, very close to the device, solving a great amount of external interference problems.

A new method for on wafer noise measurement

IEEE Transactions on Microwave Theory and Techniques, 1993

A new method for measuring the noise parameters of MESFET's and HEMT's is presented. This new method is based on the fact that only three independent noise parameters are sufficient to fully describe the device noise performance.

A novel extraction procedure to determine the noise parameters of on-wafer devices

2013

A new procedure for the extraction of noise parameters of on-wafer devices is presented and validated experimentally for the first time. The procedure is based on the noise figure measurement of similar devices of different size and biased at constant drain current density J ds and constant drain voltage V ds. Key to its implementation is a scalable noise model. The model in use is the Pospieszalski noise model, based on the equivalent noise temperatures Tgs and T ds of the gate-source and the drain-source resistance, respectively. The new procedure also outlines a path towards the experimental validation of all the noise temperatures associated with the device's lossy elements.

A New Method for Measurement of Low-Frequency Noise of MOSFET

IEEE Transactions on Instrumentation and Measurement, 2013

In this paper, we present a new method for measuring the low-frequency noise of MOSFET transistors. A closedloop structure is used in order to bias the MOSFET under test. This method eliminates the need for I-V characteristics of the MOSFET device, transconductance measurement, current source, and current amplifier which are required in a conventional gate-referred low-frequency noise measurement. The proposed method simplifies the low-frequency noise measurement and reduces the cost of the measurement test setup significantly. The proposed method directly measures the gate-referred noise of MOSFET in contrast to the conventional method which measures drain current noise of MOSFET and divides it by MOSFET transconductance. Therefore, the need for accurate measurement of I-V characteristics of the MOSFET is eliminated, leading to the better accuracy of the measured noise. Circuit implementation of the test setup is presented in this paper. Results of this measurement method are compared to those of the conventional measurement method. It has been shown that the results using two methods are comparable.

Automatic measurement system for the DC and low-f noise characterization of FETs at wafer level

2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings, 2015

In this work we propose a measurement setup topology suitable for the automatic DC and low frequency noise (LFN) characterization of field effect transistors at wafer level. The system is composed of source and measure units (SMUs), by a custom-built low noise amplifier (LNA), and by a PC based spectrum analyzer. No bias filters and switch matrices are used, allowing fast switching between DC and LFN measurements together with low leakage. The programmable LNA can reach background noise levels in the order of fA/Hz 1/2 , while DC performances are limited by the SMUs. The main feature of the proposed system is the high degree of operational flexibility due to the complete PC-based software control. LFN characterization, down to bias DC currents of 1pA, in organic thin film transistors is reported to demonstrate system operation and performances.

Bipolar Junction Transistor 1/f Noise Simulation and Parameter Extraction Technique

Elektronika Ir Elektrotechnika, 2015

In many cases it is important for practical applications to determine 1/f noise parameters of BJT for SPICE model but their exact values could not be theoretically predicted and must be obtained from the measurements. In this paper error sources in determination of noise parameters from measurement data are discussed. Different bipolar junction transistor noise measurement circuits are analysed using simulation technique to determine the most favourable circuit configuration and bias conditions. Some specific cases and problems related to noise parameter extraction are discussed. Ill. 8, bibl. 8 (in English; summaries in Lithuanian, English and Russian).

Instrumentation Design for Gate and Drain Low Frequency Noise Measurements

2006

In this paper we present an on-wafer measurement system suited for the characterization of low frequency current noise in CMOS devices. Guidelines for designing the preamplifier and the bias stage at the drain and gate terminals are discussed. A simple implementation of the proposed design approach is reported. The system capability is tested through 1/f noise measurements in advanced CMOS devices