Reliable MLC NAND flash memories based on nonlinear t-error-correcting codes (original) (raw)

2010 IEEE/IFIP International Conference on Dependable Systems & Networks (DSN), 2010

Abstract

Abstract Multi-level cell (MLC) NAND flash memories are very popular storage media because of their power efficiency and big storage density. This paper proposes to use nonlinear t-error-correcting codes to replace linear BCH codes for error detection and correction in MLC NAND flash memories. Compared to linear BCH codes with the same bit-error correcting capability t, the proposed codes have less errors miscorrected by all codewords and nearly no undetectable errors. For example, the proposed (8281, 8201, 11 ...

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