Field-assisted capture of electrons in semi-insulating GaAs (original) (raw)
Related papers
Microscopic modelling of semi-insulating GaAs detectors
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 1997
We present a drift-diffusion model of semi-insulating n-GaAs detectors, taking into account the presence of hot-carrier dynamics, conduction band features and the kinetics of trapping and detrapping from deep and shallow centres. We provide unambiguous evidence of a field-enhanced capture cross section for EL2 and EL3 centres as conjectured by McGregor [1] for the case of EL2. This result is
Loading Preview
Sorry, preview is currently unavailable. You can download the paper by clicking the button above.