Optimized design of substrate integrated waveguide cavity based oscillators (original) (raw)

Low Phase Noise Oscillator at 60 GHz Stabilized by a Substrate Integrated Cavity Resonator in LTCC

IEEE Microwave and Wireless Components Letters, 2014

In this letter we report a low phase noise oscillator exhibiting state-of-the-art phase noise characteristics at 60 GHz. The oscillator is stabilized by an off-chip substrate integrated waveguide (SIW) cavity resonator, manufactured in LTCC technology. The area on top of the cavity resonator is used to flipchip mount the MMIC, realized in SiGe technology. Measured oscillators discussed in this paper operate at frequencies of 59.91 GHz, 59.97 GHz and 59.98 GHz. The measured phase noise at 1 MHz offset is −115.76 dBc/Hz, −115.92 dBc/Hz and −116.41 dBc/Hz, respectively. To our knowledge, the present hybrid oscillator has the lowest phase noise and highest figure of merit of integrated oscillators at V-band. The simulations are in very good agreement with the measured oscillation frequencies.

A Critical Review of Substrate Integrated Waveguide for Microwave Applications

2016 Second International Conference on Computational Intelligence & Communication Technology (CICT), 2016

This paper shows critical review of substrate Integrated waveguide (SIW) technology. Dielectric filled waveguide is converted into SIW with periodic arrangement of metallized holes on both sides of the it. SIW exhibit high pass response of conventional waveguide and band stop characteristics of periodic design. So filters designed using SIW exhibit less loss, less cost , less weight, high quality factor and high power handling capability. Various SIW passive and active circuits has been studied. Numerical method for modeling and design of SIW components is shown. A SIW has been designed showing insertion loss less than 0.1 dB. Design solutions for loss reduction are also discussed. Future design scope mainly aiming at Systems-on-Substrate integration of SIW components at higher frequencies including Ultra Wide Band range are also discussed.

The substrate integrated circuits - a new concept for high-frequency electronics and optoelectronics

2003

A new generation of high-frequency integrated circuits is presented, which is called substrate integrated circuits (SICs). Current state-of-the-art of circuit design and implementation platforms based on this new concept are reviewed and discussed in detail. Different possibilities and numerous advantages of the SICs are shown for microwave, millimeter-wave and optoelectronics applications. Practical examples are illustrated with theoretical and experimental results for substrate integrated waveguide (SIW), substrate integrated slab waveguide (SISW) and substrate integrated nonradiating dielectric (SINRD) guide circuits. Future research and development trends are also discussed with reference to low-cost innovative design of millimeter-wave and optoelectronic integrated circuits.

High Performance VCO Design Using High Q SIW Resonator

2021 6th International Conference on Communication and Electronics Systems (ICCES), 2021

This paper presents a novel methodology to implement LC tank in the design of a Voltage Controlled Oscillator (VCO) for improved phase noise and tuning range. For frequency selection, Substrate Integrated Waveguide (SIW) based LC resonator is proposed and employed in cross-coupled differential pair. The SIW is designed to operate in the range from 55 GHz to 70 GHz while the VCO is designed to work at 60 GHz using 65 nm CMOS technology. The SIW resonator based VCO achieves high Quality factor (Q), improved tuning range and phase noise compared to conventional LC tank VCO. Simulation and analysis of results are performed in Keysight Advanced Design Systems while SIW structure is designed in Ansys HFSS which forms the feedback path. A detailed comparison is made between the two methods. The conventional LC VCO has a measured tuning range of 7.5 GHz while consuming 2.38 mW power from a 1-V power supply where as SIW tank VCO has an improved 15 GHz tuning range, absorbing 0.385 mW power from a 1-V power supply. The LC VCO and SIW tank VCO has a phase noise of -143.585 dBc/Hz and -113.8 dBc/Hz at 1 MHz offset and corresponding figure of merits are - 164 dBc/Hz and -195 dBc/Hz respectively

Miniaturization Trends in Substrate Integrated Waveguide for Microwave Communication Systems

2022 2nd International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET), 2022

Substrate integrated waveguide structure is an emerging candidate for the components operating within the microwave and millimeter-wave communication system due to its multiple advantages: compact size, low losses, and low fabrication cost. Recently miniaturization of SIW is taking place day by day. In this article, the link of full-mode SIW (FMSIW), eighth-mode SIW (EMSIW), and sixteenth mode SIW (SMSIW) has been presented with their additional advantages. This paper may be a guideline of the analysis of recent miniaturization of substrate integrated waveguides and it can provide a design guideline of microwave components especially in small-size systems.

Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

30th European Microwave Conference, 2000, 2000

This paper shows the feasibility of implementing CMOS microwave oscillators on Silicon-on-Insulator (SOI) substrate at 5.8 and 12 GHz. The oscillators have been designed by introducing in a circuit simulator (SPICE) the SOI MOSFET's models developed at our laboratory. The models and the fabrication process of 0.25 µm channel length Fully Depleted (FD) SOI MOSFET's were not yet optimized for the first oscillator designs presented in this paper. However, the results show the potentiality of SOI CMOS technology for building low-power, low-voltage RF circuits.

A Review on SIW and Its Applications to Microwave Components

Electronics MDPI, 2022

Substrate-integrated waveguide (SIW) is a modern day (21st century) transmission line that has recently been developed. This technology has introduced new possibilities to the design of efficient circuits and components operating in the radio frequency (RF) and microwave frequency spectrum. Microstrip components are very good for low frequency applications but are ineffective at extreme frequencies, and involve rigorous fabrication concessions in the implementation of RF, microwave, and millimeter-wave components. This is due to wavelengths being short at higher frequencies. Waveguide devices, on the other hand, are ideal for higher frequency systems, but are very costly, hard to fabricate, and challenging to integrate with planar components in the neighborhood. SIW connects the gap that existed between conventional air-filled rectangular waveguide and planar transmission line technologies including the microstrip. This study explores the current advance-ments and new opportunities in SIW implementation of RF and microwave devices including filters, multiplexers (diplexers and triplexers), power dividers/combiners, antennas, and sensors for modern communication systems.

Review of substrate-integrated waveguide circuits and antennas

IET Microwaves, Antennas & Propagation, 2011

Substrate-integrated waveguide (SIW) technology represents an emerging and very promising candidate for the development of circuits and components operating in the microwave and millimetre-wave region. SIW structures are generally fabricated by using two rows of conducting cylinders or slots embedded in a dielectric substrate that connects two parallel metal plates, and permit the implementation of classical rectangular waveguide components in planar form, along with printed circuitry, active devices and antennas. This study aims to provide an overview of the recent advances in the modelling, design and technological implementation of SIW structures and components.

A Temperature-Compensation Technique for Substrate Integrated Waveguide Cavities and Filters

IEEE Transactions on Microwave Theory and Techniques, 2000

A new temperature compensation method is proposed and demonstrated in this paper for cavities and filters realized in substrate integrated waveguide (SIW). The SIW structures largely preserve the well-known advantages of conventional rectangular waveguide, namely, high and high power capacity, and have the advantages of microstrip lines, such as low profile, small volume, and light weight. In this paper, we demonstrate that by an adequate selection of substrate properties, SIW cavities can provide self-temperature drift compensation. The compensation is achieved by using an appropriate ratio between the coefficient of thermal expansion and the thermal coefficient of the permittivity. The theoretical prediction is confirmed by an experimental investigation using inductive post filters. Three commercially available substrates are used to design cavities at 10 GHz with the Roger TMM10 substrate providing a close fit to the required characteristics for temperature compensation. The results for the cavity show a stability of 2 ppm/ C in calculation and 8 ppm/ C in measurement. A SIW fourth-order Chebyshev filter, centered at 10 GHz with 1-GHz bandwidth, has also been designed. The measured frequency drift is 9.1 ppm/ C and the bandwidth variation is 0.13% over the temperature range of 40 C to 80 C. Index Terms-Cavity, coefficient of thermal expansion (CTE), equivalent linear frequency drift, filter, substrate integrated waveguide (SIW), temperature compensation.

Design and implementation of a substrate integrated waveguide phase shifter

2008

The design and implementation of a phase shifter based on the substrate integrated waveguide (SIW) technique operating at 10 GHz are presented. The proposed phase shifter consists of a SIW section with two inserted metallic posts. The phase shifting in this configuration is achieved by changing the diameter and the position of these posts. Numerical simulations have been carried out for different diameters and positions, which have shown good agreement with the theory. A parametric study was also conducted to assess the impact of errors made on the diameter and position of the two metallic posts. To prove the concept, prototypes were fabricated and measured. Experimental results agree well with simulations and S11 was better than-14 dB, S21 better than-1.08 dB and the phase error was less than 1.58.