External cavity multiline semiconductor laser for WDM applications (original) (raw)

External cavity multiwavelength superbroadband diode laser

Optics Communications, 2003

Multiwavelength semiconductor laser source for dense wavelength division multiplexing (DWDM) applications based on a novel dispersive cavity is described. Multiline lasing on the basis of a single-diode laser chip and multi-stripe diode laser is analyzed theoretically and demonstrated experimentally. Simultaneous lasing across $80% of the FWHM of the luminescence bandwidth of the AlGaAs active medium (657-667 nm) in multiline regime with a special preassigned spectral composition was realized. For DWDM applications a prototype of this superbroadband semiconductor laser operating in one of the telecommunication wavelength bands around 1.5 lm has been designed on the basis of a multi-stripe diode chip. Simultaneous lasing of four spectral lines in the region 1567-1577 nm has been obtained.

High-power semiconductor lasers for applications requiring GHz linewidth source

High-Power Diode Laser Technology and Applications VII, 2009

In this paper we present the development of semiconductor laser systems with output powers reaching 100 W and linewidths down to 10 GHz. The combination of high power and narrow emission spectrum was achieved through external resonator configurations based on volume Bragg gratings. By using Bragg gratings with extremely narrow spectral selectivity we were able to narrower and lock emission spectra of diode lasers, with precise wavelength tuning achieved by thermal control of the volume grating. The thermal coefficient of our volume gratings was approximately 8 pm/K, which was low enough to guarantee stable frequency operating regime. We implemented successfully two such schemes for lasers generating at 780 nm and 1.55 μm as pumping sources for Rb vapor and Er-doped solid state lasers, correspondingly.

High-power semiconductor lasers for applications requiring GHz linewidth source

2009

In this paper we present the development of semiconductor laser systems with output powers reaching 100 W and linewidths down to 10 GHz. The combination of high power and narrow emission spectrum was achieved through external resonator configurations based on volume Bragg gratings. By using Bragg gratings with extremely narrow spectral selectivity we were able to narrower and lock emission spectra of diode lasers, with precise wavelength tuning achieved by thermal control of the volume grating. The thermal coefficient of our volume gratings was approximately 8 pm/K, which was low enough to guarantee stable frequency operating regime. We implemented successfully two such schemes for lasers generating at 780 nm and 1.55 μm as pumping sources for Rb vapor and Er-doped solid state lasers, correspondingly.

High-Brightness Wavelength Beam Combined Semiconductor Laser Diode Arrays

IEEE Photonics Technology Letters, 2000

We report the wavelength beam combining of an array of high-power high-brightness 970-nm slab-coupled optical waveguide lasers. A 50-W peak power under quasi-continuouswave (CW) operation was measured in an output beam with a beam quality of M x;y 2 = 1:2, and 30 W under CW operation was measured with a beam quality of M x;y 2 = 2.

Coupled cavity DQW semiconductor lasers

Materials Science and Engineering: B, 2000

Coupled cavity effects has been observed in the electroluminescence spectra of monolithic GaAs/GaAlAs double quantum well graded index separate confinement heterostructure semiconductor diode lasers. A time domain analysis has been performed in order to simulate the experimentally observed results. The theoretically calculated spectra are in good agreement with the experimentally observed spectra.

Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure

IEE Proceedings - Optoelectronics, 2000

A dual mode laser source is proposed. It is based on a sampled grating DFB laser constituted with alternating DFB and FP sections. The basic principles of this device are presented, and its behaviour is studied through modelling. It is shown that mode spacing in the millimetre-wave domain (here 60GHz) can be achieved with relatively short devices using a common DFB structures coupling coefficient.

New dynamic multimode model for external cavity semiconductor lasers

IEE Proceedings J Optoelectronics

A new, dynamic, time-domain, numerical model for external cavity lasers, based on the transmission-line laser model (TLLM), is introduced. This is able to show the evolution of spectra from large-signal modulated devices, even when the modulation pulsewidth is less than the external cavity round-trip delay. The model is demonstrated using short and long dispersionless cavities. Results in the time and spectral domains are in agreement with those of previous theoretical and experimental work.

Characteristics of the single-longitudinal-mode planar-waveguide external cavity diode laser at 1064 nm

Optics Letters, 2014

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 10 4 at 10 mHz. The PW-ECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

Integrated dual-wavelength semiconductor laser systems for millimeter wave generation

ISLC 2012 International Semiconductor Laser Conference, 2012

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