Non‐contacting measurements of photocarrier lifetimes in bulk‐and polycrystalline thin‐film Si photoconductive devices by photothermal radiometry
Andreas Mandelis
1996
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Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects
Andreas Mandelis
2003
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Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay
Andreas Mandelis
Journal of Applied Physics, 2000
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Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors
Shahidul Hassan
International Journal of Optoelectronic Engineering, 2012
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Computational aspects of laser radiometric multiparameter fit for carrier transport property measurements in Si wafers
Andreas Mandelis
2000
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Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
Andreas Mandelis
Journal of Applied Physics, 2005
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Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
Karsten Bothe
Applied Physics Letters, 2008
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Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry
Jerias Batista
Journal de Physique IV (Proceedings), 2005
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Photothermal rate‐window spectrometry for noncontact bulk lifetime measurements in semiconductors
zhuohui chen
1993
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Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation
Andreas Mandelis
NDT & E International, 2006
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Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
Adriana Gutiérrez
Physica B: Condensed Matter, 2011
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Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers
Karsten Bothe
Journal of Applied Physics, 2009
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Laser infrared photothermal radiometry of electronic solids: Principles and applications to industrial semiconductor Si wafers
Andreas Mandelis
2000
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The surface recombination velocity and bulk lifetime influences on photogenerated excess carrier density and temperature distributions in n-type silicon
sanja aleksic
Facta universitatis - series: Electronics and Energetics
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Some challenges in making accurate and reproducible measurements of minority carrier lifetime in high-quality Si wafers
Bhushan Sopori
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014
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Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers
José Barnoya García, Andreas Mandelis
Journal of Applied Physics, 2004
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Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
Andreas Mandelis
Applied Physics Letters, 2003
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INFLUENCE OF RTP PROCESS ON THE CARRIER LIFETIME IN BARE CZ SILICON WAFERS
YACINE KOUHLANE
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Experimental investigations of the dependence of the lifetime of the optically generated minority carriers in n-type silicon on the intensity of its illumination
Miroslaw Malinski
PRZEGLĄD ELEKTROTECHNICZNY
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Silicon Epitaxial Layer Lifetime Characterization
F. Kirscht
Journal of The Electrochemical Society, 2001
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New technique for lifetime and surface/interface recombination velocity measurement in thin semiconductor layers
Arnost Neugroschel
IEEE Transactions on Electron Devices, 1992
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Carrier-density-wave transport and local internal electric field measurements in biased metal-oxide-semiconductor n-Si devices using contactless laser photo-carrier radiometry
Andreas Mandelis
Semiconductor Science and Technology, 2004
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QSS-μPCD measurement of lifetime in silicon wafers: advantages and new applications
Jacek Lagowski, Alexandre Savtchouk
Energy Procedia, 2011
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Laser Infrared Photothermal Radiometric and ELYMAT Characterizations of p-Si Wafers Annealed in the Presence of an External Electric Field
Andreas Mandelis
physica status solidi (a), 2001
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H ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
Chinhua Wang
2007
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Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples
Torsten Hahn, Kay Dornich
Solar Energy Materials and Solar Cells, 2010
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Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data
Andres Vega Cuevas
Applied Physics Letters, 1996
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Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers
nabil khelifati
Acta Physica Polonica A, 2016
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Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
Andreas Mandelis
Physical Review B, 2003
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Theoretical Analysis of the Minority Carrier Lifetime in a Multicrystalline Wafer with Spatially Varying Defect Distribution
Bhushan SOPORI
MRS Proceedings, 1998
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Photothermal Radiometric Frequency-Swept Studies of Kinetics Process in P-Si Wafer
Andreas Mandelis
2001
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Applications of the quasi-steady-state photoconductance technique
Andres Cueva
1998
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Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon
M Pawlak
Journal of Applied Physics, 2005
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