Characterization of Linear-mode Avalanche Photodiodes in Standard CMOS (original) (raw)
Related papers
Assessment of bulk silicon quality after SOI removal and subsequent oxide removal is demonstrated utilising Geiger mode avalanche photodiodes. The dark count differences measured from Geiger mode operation of fabricated avalanche photodiodes was negligible between SOI and standard P-epi manufactured diodes. Photon count rates of illuminated test structures operating in Geiger mode were identical. This rapid test showed no differences among buried oxide plasma and wet etch removal. As plasma processing is preferred for the preferential opening of the buried oxide this is an important finding for subsequent device fabrication. The results of this rapid test assessment will be shown as well as the results from initial fabricated devices based on the findings from this work.
Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology
IEEE Transactions on Electron Devices, 2000
Avalanche photodiodes (APDs) operating in Geiger mode can detect weak optical signals at high speed. The implementation of APD systems in a CMOS technology makes it possible to integrate the photodetector and its peripheral circuits on the same chip. In this paper, we have fabricated APDs of different sizes and their driving circuits in a commercial 0.18-µm CMOS technology. The APDs are theoretically analyzed, measured, and the results are interpreted. Excellent breakdown performance is measured for the 10 and 20 µm APDs at 10.2 V. The APD system is compared to the previous implementations in standard CMOS. Our APD has a 5.5% peak probability of detection of a photon at an excess bias of 2 V, and a 30 ns dead time, which is better than the previously reported results.
Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35µm technology
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015
Some decades ago single photon detection used to be the terrain of photomultiplier tube 9 (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several 10 disadvantages such as low quantum efficiency, overall dimensions, and cost, making 11 them unsuitable for compact design of integrated systems. So, the past decade has seen a 12 dramatic increase in interest in new integrated single--photon detectors called Single--13
Bias Voltage and Current Sense Circuits for Avalanche Photodiodes Feeding and Reading the APD
Avalanche photodiodes (APDs) are widely utilized in laser based fiberoptic systems to convert optical data into electrical form. The APD is usually packaged with a signal conditioning amplifier in a small module. An APD receiver module and attendant circuitry appears in Figure 1. The APD module (figure right) contains the APD and a transimpedance (e.g., current-to-voltage) amplifier. An optical port permits interfacing fiberoptic cable to the APD’s photosensitive portion. The module’s compact construction facilitates a direct, low loss connection between the APD and the amplifier, necessary because of the extremely high speed data rates involved.
Nuclear Instruments and …, 2010
High sensitivity and excellent timing accuracy of the Geiger mode avalanche photodiodes make them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase in the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 mm and a high integration 0.13 mm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.
High efficiency 1.55 μm Geiger-mode single photon counting avalanche photodiodes operating near 0°C
Quantum Sensing and Nanophotonic Devices V, 2008
Recent developments in three-dimension imaging, quantum cryptography, and time-resolved spectroscopy have stimulated interest in single-photon counting avalanche photodiodes (APD) operating in the short wavelength infrared region. For visible and near infrared wavelengths, Silicon Geiger-mode APDs have demonstrated excellent photon detection efficiency (PDE) and low dark current rate (DCR) 1. Recently, MIT Lincoln Laboratories, Boeing Spectrolab, and Boeing SVS have demonstrated Geiger-mode (GM) APD focal plane arrays (FPA) operating at 1.06 µm. However for longer wavelength sensitivity around 1.55 µm, GM-APDs have to be cooled to 180~240 K to achieve a usable DCR. Power consumption, package weight and size and APD PDE all suffer with this cooling requirement. In this paper we report the development of an InP/InGaAs GM-APD structure with high PDE and low DCR at 273K. The photon collection efficiency was optimized with a single step-graded quaternary layer and a 3.5 µm InGaAs absorption layer, which provides a broadband coverage from 0.95 µm to 1.62 µm. The InP multiplication layer and the charge layer are carefully tailored to minimize the DCR and maximize the PDE. Despite having a low bandgap absorber layer InGaAs, these APDs demonstrated excellent dark current, optical responsivity, and superior DCR and PDE at 1.55 µm. The DCR and PDE were evaluated on 25 µm diameter APDs at 273 K. DCRs as low as 20 kHz have been measured at a 2 V overbias, while PDEs at 1.55 µm exceed 30% at 2 V overbias.
Low Dark Count Geiger Mode Avalanche Photodiodes Fabricated in Conventional CMOS Technologies
Sensor Letters, 2011
Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35 m technology is also presented in this article.