Dislocations in GaAs grown by ALMBE on (001) Si (original) (raw)
Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates
Yu-Hwa Lo
Applied Physics Letters, 1988
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Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm−2)
Georg Muller
Journal of Crystal Growth, 1999
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Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE
Mehmet Kaya
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Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy
Luke Nyakiti
Applied Physics A Solids and Surfaces, 1987
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Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy
Jongyeong lee
Applied Microscopy, 2014
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How to Avoid Plastic Deformation in GaAs Wafers during Molecular Beam Epitaxial Growth
Peter Moeck
Crystal Research and Technology, 2000
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Dislocation multiplication in GaAs : inhibition by doping
Nelly Burle
Revue de Physique Appliquée, 1989
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Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
Thomas Marschner
Journal of Crystal Growth, 1996
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Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures
Elkhan Pashaev
Semiconductors, 1997
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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs GaAs (001) system
Albert johnson
Applied Surface Science, 1998
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Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy
Maciej Bugajski
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Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy
Anna Vila, A. Cornet, J. Morante
Journal of Applied Physics, 1993
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Dislocations in medium to highly mismatched III–V epitaxial heterostructures
Laura Lazzarini
Journal of Crystal Growth, 1993
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Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy
M. Missous
Journal of Applied Physics, 1997
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Investigation of residual dislocations in VGF-grown Si-doped GaAs
Georg Muller
Journal of Crystal Growth, 2005
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Atomic structure of an unusual linear defect at the (001)InAs/(001)GaAs epitaxial interface
Roland Bonnet
Surface and Interface Analysis, 2000
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
quang luc
Applied Physics Letters, 2016
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Deep levels in GaAs grown by atomic layer molecular beam epitaxy
Roberto Mosca
Applied Physics Letters, 1994
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Strain-relief mechanisms and nature of misfit dislocations in GaAs/Si heterostructures
J. Narayan
Materials Science and Engineering: A, 1989
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Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
Patrick McNally
Journal of Materials Science: Materials in Electronics, 2008
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
Cai Wen
AIP Advances
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Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas
José Alvarez
Applied Physics Letters, 2013
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Misfit dislocations in GaAsN/GaAs interface
Patrick McNally
Journal of Materials Science-Materials in Electronics, 2003
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Etch pit patterns of misfit dislocations in ALGaAs/GaAs heterostructures
A. Christou
Materials Letters, 1988
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Superior molecular beam epitaxy (MBE) growth on (< i> N 11) A GaAs
Yael Hanein
1999
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In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
Harri Lipsanen
Journal of Materials Science: Materials in Electronics, 2008
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Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities
Georg Muller
physica status solidi (a), 2005
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Analysis of thermal-treatment-induced dislocation bundles in GaAs wafers by means of X-ray transmission topography and complementary methods
Peter Moeck
Journal of Applied Crystallography, 2001
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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
Ph. Komninou
Applied Surface Science, 2014
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Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates
Rocio Hernandez
2007
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