Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs (original) (raw)

IEEE Electron Device Letters, 2000

Abstract

We present a comparative study of the surface-roughness (SR)-induced variability at low supply voltage VDD=hbox0.3hboxVV_{DD} = \hbox{0.3}\ \hbox{V}VDD=hbox0.3hboxV in nanowire InAs tunnel FETs and strained-silicon (sSi) MOSFETs. By exploiting a 3-D full-quantum approach based on the Non-Equilibrium Green's Function formalism, we show that the IrmonI_{\rm on}Irmon variability in InAs tunnel FETs is much smaller than the IrmoffI_{\rm off}Irmoff variability, whereas

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