Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs (original) (raw)

Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs

2010 International Electron Devices Meeting, 2010

Abstract

... Conclusions Monte Carlo simulations extensively verified with experiments show that Ge MOSFETs are competitive with but do not out-perform sSi devices in terms of on-current. ... References [1] T. Low et al. in IEDM Tech. Dig., p. 691, 2003 [2] A. Rahman et al. in IEDM Tech. ...

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