Analysis of the forward and reverse bias IV characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range (original) (raw)
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Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (ΦB0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the ΦB0 increases with increasing temperature. Therefore, we attempted to draw a Φbo vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.
Applied Surface Science, 2007
The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height F B0 (I-V), ideality factor (n) and series resistance (R s ) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the F B0 (I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperature dependent I-V data reveal an unusual behaviour such that the F B0 decreases, as the n and R s values are increasing with decreasing absolute temperature, and these changes are more pronounced especially at low temperatures. Such temperature dependence of BH is contradictory with the reported negative temperature coefficient of the barrier height. In order to explain this behaviour we have reported a modification in the expression reverse saturation current I o including the n and the tunnelling factor (aX 1/2 d) estimated to be 15.5. Therefore, corrected effective barrier height F bef. (I-V) versus temperature has a negative temperature coefficients (a = À2.66 Â 10 À4 eV/K) and it is in good agreement with negative temperature coefficients (a = À4.73 Â 10 À4 eV/K) of Si band gap. In addition, the temperature dependent energy distribution of interface states density N ss profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the F e and n. The forward bias I-V characteristics confirm that the distribution of N ss , R s and interfacial insulator layer are important parameters that the current conduction mechanism of MS Schottky diodes. #
Applied Physics A, 2017
In this paper, we report the preparation and characterization of SnO 2-PVA nanocomposite film as interlayer for Schottky barrier diodes (SBDs). The possible current transport mechanisms (CTMs) of the prepared SBDs were investigated using the forward-bias currentvoltage (I-V) characteristics in the temperature range of 80-400 K. The structure of nanocomposite film was characterized by an X-ray diffractometer (XRD) and the surface morphology was investigated using a Scanning Electron Microscopy (SEM) at room temperature. The values of ideality factor (n) and zero-bias barrier height (U Bo) showed variation with temperature, such that they changed from 19.10 to 3.77 and 0.190 to 0.844 eV, respectively. U Bo-n, U Bo −q/2kT, and n −1 −q/2kT plots were drawn to get evidence to the Gaussian Distribution (GD) of the barrier height (BH). These plots revealed two distinct linear regions with different slopes for low temperatures (80-160 K) (LTs) and high temperatures (180-400 K) (HTs). This behavior is an evidence to the existence double GD of BHs which provides an average value for BH (U Bo) and a standard deviation (σ s) for each region. The high value of n especially at low temperatures was attributed to the existence of interlayer: interface states (N ss) and barrier inhomogeneity at Au/n-Si interface. The values of U Bo and σ s were obtained from the intercept and slope of mentioned plots as 0.588 and 0.0768 V for LTs and 1.183 eV and 0.158 V for HTs, respectively. Moreover, the modified ln (I s /T 2)−q 2 σ s 2 /2k 2 T 2 vs q/kT plot also showed two linear regions. The values of U Bo and effective Richardson constant (A *) were extracted from the slope and intercept of this plot as 0.610 eV and 93.13 A/cm 2 K 2 for LTs and 1.235 eV and 114.65 A/cm 2 K 2 for HTs, respectively. The value of A * for HTs is very close to the theoretical value (112 A/cm 2 K 2) of n-type Si. Thus, the forward-bias I-V-T characteristics of Au/SnO 2-PVA/n-Si (SBDs) were successfully explained in terms of the thermionic-emission (TE) mechanism with a double GD of BHs.
2012
We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung's method in the extraction of the series resistance with Ohm's law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm-2 K-2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.
2014
The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height ()B), ideality factor (n), saturation current (I0), doping concentration (ND), and series resistance (Rs), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(Io/T 2) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height ( bo) and standard deviation (·0) calculated using the apparent Schottky barrier height ()ap) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I0/T 2) 1 (q·)2/2(kT)2 versus 1000/T, the A** was extracted as 134A/cm2K2, which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperatu...
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
Applied Surface Science, 2006
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (Al/Si 3 N 4 /p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80-300 K. By using the thermionic emission (TE) theory, the zero-bias barrier height F B0 calculated from I-V characteristics was found to increase with increasing temperature. Such temperature dependence is an obvious disagreement with the negative temperature coefficient of the barrier height calculated from C-V characteristics. Also, the ideality factor decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. Such behaviour is attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) at interface. We attempted to draw a F B0 versus q/2kT plot to obtain evidence of a Gaussian distribution of the BHs, and the values of F Bo = 0.826 eV and a o = 0.091 V for the mean barrier height and standard deviation at zero-bias, respectively, have been obtained from this plot. Thus, a modified ln(I o /T 2) À q 2 s o 2 /2(kT) 2 versus q/kT plot gives F B0 and Richardson constant A * as 0.820 eV and 30.273 A/cm 2 K 2 , respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 30.273 A/cm 2 K 2 is very close to the theoretical value of 32 A/cm 2 K 2 for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/Si 3 N 4 /p-Si Schottky barrier diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. In addition, the temperature dependence of energy distribution of interface state density (N SS) profiles was determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.
Journal of Electronic Materials, 2019
The current-voltage (I-V) characteristics of inhomogeneous Au/n-InP Schottky barrier (SB) diodes have been investigated in the temperature range of 100 K to 300 K, and detailed numerical simulation study carried out using a physical device simulator. The experimental I-V curves for the diode in both forward-and reverse-bias conditions were fit to explain the current transport mechanisms at low temperature. Tunneling current flows through the native oxide and nanometer-sized patches embedded at the Au/n-InP interface. These patches result in a lower (local) barrier height which is temperature dependent and responsible for the diode current behaviors in the low-bias regime. The patch area is on the order of one-millionth of the total diode area, and the SB is between 0.01 eV and 0.3 eV in the patch region. The simulation results are in good agreement with the measurements in the whole explored current range extending over six orders of magnitude.