An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices (original) (raw)

Microelectronics Reliability, 2012

Abstract

Triple-gate devices are considered a promising solution for sub-20nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time

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