Structured CsI(Tl) scintillators for X-ray imaging applications (original) (raw)
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011
Thallium doped cesium iodide (CsI:Tl) scintillator films for the use as a converter for X-ray imaging detectors were fabricated by the thermal deposition method. The microstructures of these scintillating layers were affected by various deposition conditions such as vapor pressure, substrate temperature and post-heat treatment or rapid thermal annealing (RTA). CsI(Tl) scintillator films with various polycrystalline structures were manufactured under different process conditions and prepared for experiments. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate the crystal structure and morphology properties. Light output and spatial resolution of the samples were strongly affected by the microstructures, which are determined by the deposition conditions and post-heat treatment. Imaging characteristics of the various CsI:Tl films were also measured under X-ray exposure conditions by coupling them to a CCD image sensor.
Fabrication and Performance of Micron Thick CsI(Tl) Films for X-Ray Imaging Application
IEEE Transactions on Nuclear Science, 2016
CsI(Tl) scintillator films with columnar structure are widely applied as the conversion screens for the indirect X-ray imaging. In this work, CsI(Tl) films with different micron thickness were fabricated on glass substrates by the thermal deposition method under the same deposition conditions. The influence of film thickness on the microstructure and crystalline property of the films was studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photoluminescent spectra of the films were measured, which appeared by the bimodal distribution peaking at 550 nm and 740 nm respectively. The radioluminescence and imaging performances were observed by the micron thick films coupled with CCD camera system under X-ray exposure conditions.
Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates
Applied Surface Science, 2016
CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.
Characteristics of the CsI:Tl Scintillator Crystal for X-Ray Imaging Applications
Materials Sciences and Applications
Scintillators are high-density luminescent materials that convert X-rays to visible light. Thallium doped cesium iodide (CsI:Tl) scintillation materials are widely used as converters for X-rays into visible light, with very high conversion efficiency of 64.000 optical photons/MeV. CsI:Tl crystals are commercially available, but, the possibility of developing these crystals into different geometric shapes, meeting the need for coupling the photosensor and reducing cost, makes this material very attractive for scientific research. The objective of this work was to study the feasibility of using radiation sensors, scintillators type, developed for use in imaging systems for X-rays. In this paper, the CsI:Tl scintillator crystal with nominal concentration of the 10 −3 M was grown by the vertical Bridgman technique. The imaging performance of CsI:Tl scintillator was studied as a function of the design type and thickness, since it interferes with the light scattering and, hence, the detection efficiency plus final image resolution. The result of the diffraction X-ray analysis in the grown crystals was consistent with the pattern of a face-centered cubic (fcc) crystal structure. Slices 25 × 2 × 3 mm 3 (length, thickness, height) of the crystal and mini crystals of 1 × 2 × 3 mm 3 (length, thickness, height) were used for comparison in the imaging systems for X-rays. With these crystals scintillators, images of undesirable elements, such as metals in food packaging, were obtained. One-dimensional array of photodiodes and the photosensor CCD (Coupled Charge Device) component were used. In order to determine the ideal thickness of the slices of the scintillator crystal CsI:Tl, Monte Carlo method was used.
X-ray imaging performance of structured cesium iodide scintillators
Medical physics, 2004
Columnar structured cesium iodide ͑CsI͒ scintillators doped with Thallium ͑Tl͒ have been used extensively for indirect x-ray imaging detectors. The purpose of this paper is to develop a methodology for systematic investigation of the inherent imaging performance of CsI as a function of thickness and design type. The results will facilitate the optimization of CsI layer design for different x-ray imaging applications, and allow validation of physical models developed for the light channeling process in columnar CsI layers. CsI samples of different types and thicknesses were obtained from the same manufacturer. They were optimized either for light output ͑HL͒ or image resolution ͑HR͒, and the thickness ranged between 150 and 600 microns. During experimental measurements, the CsI samples were placed in direct contact with a high resolution CMOS optical sensor with a pixel pitch of 48 microns. The modulation transfer function ͑MTF͒, noise power spectrum ͑NPS͒, and detective quantum efficiency ͑DQE͒ of the detector with different CsI configurations were measured experimentally. The aperture function of the CMOS sensor was determined separately in order to estimate the MTF of CsI alone. We also measured the pulse height distribution of the light output from both the HL and HR CsI at different x-ray energies, from which the x-ray quantum efficiency, Swank factor and x-ray conversion gain were determined. Our results showed that the MTF at 5 cycles/mm for the HR type was 50% higher than for the HL. However, the HR layer produces ϳ36% less light output. The Swank factor below K-edge was 0.91 and 0.93 for the HR and HL types, respectively, thus their DQE͑0͒ were essentially identical. The presampling MTF decreased as a function of thickness L. The universal MTF, i.e., MTF plotted as a function of the product of spatial frequency f and CsI thickness L, increased as a function of L. This indicates that the light channeling process in CsI improved the MTF of thicker layers more significantly than for the thinner ones.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2009
Pixelated-scintillator films used for X-ray image sensors were developed and tested. The air gap between scintillator pixels reduces the transport of visible light photons generated by X-rays into the neighboring pixels so it will maximize the overall spatial resolution as well as the light collection efficiency of an X-ray imager. For further improvement, the inter-pixel gaps and surface are filled and coated with a reflective or a lower refractive material than an CsI(Tl) scintillator. The scintillator films of 30-40 mm thickness were made with thallium-doped CsI by the conventional physical vapour deposition process on glass substrates with a photo resist layer patterned by UV lithography. In this work, the effects on light collection efficiency and spatial resolution of the pixelated-scintillator films before and after reflective coating were evaluated using a CCD sensor and X-rays within the medical diagnostic energy range.
Recent advances in columnar CsI(Tl) scintillator screens
Penetrating Radiation Systems and Applications VII, 2005
Columnar CsI(Tl) screens are now routinely used in indirect digital x-ray imaging detectors. The CsI(Tl) scintillator provides high density, high atomic number, and high scintillation efficiency. These properties, coupled with the fact that CsI(Tl) can be grown in columnar form, provide excellent spatial resolution, high x-ray absorption, and low noise resulting in detectors with high overall detective quantum efficiency (DQE(f)). While such screens are now commercially available, developments leading to further improvements in scintillator performance are ongoing at RMD. Here we report on the recent progress in developing very thin (10 µm) to very thick (~3 mm) columnar screens and discuss their application potential in digital radiology and nuclear medicine.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007
The light emission performance of the X-ray excited CsI:Tl single-crystal scintillator was investigated as a function of X-ray tube voltage and crystal thickness. Four CsI:Tl single-crystal layers (CRYOS Ltd., Ukraine) with thickness from 1 to 7 mm were irradiated employing two X-ray tube voltage ranges: (i) the 22-45 kV (molybdenum anode-molybdenum filter (Mo/Mo)) range, employed in mammographic imaging and (ii) the 40-140 kV (tungsten anode-aluminum filter) tube voltage range, used in general X-ray projection and tomographic imaging. The X-ray luminescence efficiency (light emission spectrum over incident X-ray fluence) of the crystals was determined by performing light emission spectrum and X-ray exposure measurements. In addition, the intrinsic conversion efficiency (fraction of the absorbed X-ray converted into light) and the spectral compatibility to various optical detectors were estimated from these measurements. The luminescence efficiency was found to be a nonlinear function of crystal thickness and of X-ray tube voltage. Peak efficiency (29.5 mWm À2 /mRs) was observed for the 5 mm thick crystal at 140 kV. A secondary efficiency peak was observed at 42 kV (Mo anode) probably due to the effect of the K-photoelectric absorption edge (at 33 and 35 keV for Cs and I, respectively). For the thicker (7 mm) crystal, the efficiency was found to decrease due to light attenuation effects within the scintillator mass.
Performance studies of a monolithic scintillator-CMOS image sensor for X-ray application
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2008
We proposed the direct deposition of CsI(Tl) scintillator layer with pixelated structure on a CMOS image sensor (CIS) in order to improve the spatial resolution. CMOS sensors developed for test have a 128×128 photodiode array with 50 μm pixel pitch and integrated readout-electronics including a 10 bit pipe-lined ADC. CsI(Tl) layer has thickness of 50 μm. The modulation transfer function, the noise power spectrum, and the detective quantum efficiency of pixelated and non-pixelated CsI(Tl) X-ray image sensors (XIS) were estimated with a 50 kVp X-ray beam. At 10% of modulation transfer function (MTF), the spatial resolution of pixelated and non-pixleated XIS are about 8 and 6 lp/mm, respectively. It implies that pixelation enhances the spatial resolution by reducing the lateral light diffusion. Though the NPS of pixelated XIS was slightly higher than the non-pixelated XIS, its detective quantum efficiency (DQE) values were much better than non-pixelated XIS especially at high spatial frequencies.
High-resolution x-ray imaging using a structured scintillator
Medical Physics, 2016
In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Methods: Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator array to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. Results: The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. Conclusions: The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.