Structural and optical characterization of type-II InAs/InAs1− xSbx superlattices grown by metalorganic chemical vapor deposition (original) (raw)

Abstract

ABSTRACT Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x 0.22, 0.23, 0.37) and different layer thicknesses (t(InAs) = 7 nm, t(InAsSb) = 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of < 100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 mu m and 5.8 mu m, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 mu m. (C )2011 American Institute of Physics. [doi:10.1063/1.3625429]

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