Characterization of large area avalanche photodiodes in X-ray and VUV-light detection (original) (raw)
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Recent progress of avalanche photodiodes in high-resolution X-rays and -rays detection
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005
We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and γrays detections. We show that reach-through APD can be an excellent soft X-ray detector operating at room temperature or moderately cooled environment. We obtain the best energy resolution ever achieved with APDs, 6.4 % for 5.9 keV X-rays, and obtain the energy threshold as low as 0.5 keV measured at −20 • C. Thanks to its fast timing response, signal carriers in the APD device are collected within a short time interval of 1.9 nsec (FWHM). This type of APDs can therefore be used as a low-energy, high-counting particle monitor onboard the forthcoming Picosatellite Cute1.7. As a scintillation photon detector, reverse-type APDs have a good advantage of reducing the dark noise significantly. The best FWHM energy resolutions of 9.4±0.3% and 4.9±0.2% were obtained for 59.5 keV and 662 keV γ-rays, respectively, as measured with a CsI(Tl) crystal. Combination of APDs with various other scintillators (BGO, GSO, and YAP) also showed better results than that obtained with a photomultiplier tube (PMT). These results suggest that APD could be a promising device for replacing traditional PMT usage in some applications. In particular 2-dim APD array, which we present in this paper, will be a promising device for a wide-band X-ray and γ-ray imaging detector in future space research and nuclear medicine.
Performance of a novel planar-processed avalanche photodiode for light and x-ray detection
Optical Engineering, 2003
We have performed a detailed investigation of the light and x-ray response of a newly developed planar avalanche photodiode (APD) of the deep diffused type. This type of photodetector design has the low noise characteristics obtained from the deep diffusion process, but it is built using only standard planar technology. We measured an excess noise factor of 1.8 at a gain of 6, which is similar to other commercial APDs. With this type of structure, the expected gain is ~ 500 at 1600 V. We have not achieved this gain because there is early breakdown at the surface. Future designs will incorporate improvements in the structure to avoid surface breakdown. In spite of this, the low noise obtained at a gain of 6, indicates that this structure, reaching full breakdown, has potential to work with very low noise. At this gain, it is found that the dominant contribution to the broadening of the energy resolution comes from preamplifier voltage noise. The measured capacitance was 20 pF, and the rise time 11 ns at 1300 V. The dependence of the gain with the density of generated carriers has also been investigated. When the gain is measured with α
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field. r
Planar LAAPDs: temperature dependence, performance, and application in low-energy X-ray spectroscopy
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005
An experiment measuring the 2S Lamb shift in muonic hydrogen (µ − p) is being performed at the Paul Scherrer Institute, Switzerland. It requires small and compact detectors for 1.9 keV x rays (2P -1S transition) with an energy resolution around 25% at 2 keV, a time resolution better than 100 ns, a large solid angle coverage, and insensitivity to a 5 T magnetic field. We have chosen Large Area Avalanche Photodiodes (LAAPDs) from Radiation Monitoring Devices as x-ray detectors, and they were used during the last data taking period in 2003. For x-ray spectroscopy applications, these LAAPDs have to be cooled in order to suppress the dark current noise, hence, a series of tests were performed to choose the optimal operation temperature. Specifically, the temperature dependence of gain, energy resolution, dark current, excess noise factor, and detector response linearity was studied. Finally, details of the LAAPDs application in the muonic hydrogen experiment as well as their response to alpha particles are presented.
Development of low-energy X-ray detectors using LGAD sensors
Journal of Synchrotron Radiation
Recent advances in segmented low-gain avalanche detectors (LGADs) make them promising for the position-sensitive detection of low-energy X-ray photons thanks to their internal gain. LGAD microstrip sensors fabricated by Fondazione Bruno Kessler have been investigated using X-rays with both charge-integrating and single-photon-counting readout chips developed at the Paul Scherrer Institut. In this work it is shown that the charge multiplication occurring in the sensor allows the detection of X-rays with improved signal-to-noise ratio in comparison with standard silicon sensors. The application in the tender X-ray energy range is demonstrated by the detection of the sulfur K α and K β lines (2.3 and 2.46 keV) in an energy-dispersive fluorescence spectrometer at the Swiss Light Source. Although further improvements in the segmentation and in the quantum efficiency at low energy are still necessary, this work paves the way for the development of single-photon-counting detectors in the s...
High resolution, low energy avalanche photodiode X-ray detectors
IEEE Transactions on Nuclear Science, 1991
Silicon avalanche photodiodes have been fabricated and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution was measured as a function of size and operating parameters. Noise thresholds as low as 212eV were obtained at room temperature and backscatter X-ray fluorescence data was obtained for aluminum and Other light elements.
Characterization of the Hamamatsu S8664 avalanche photodiode for X-ray and VUV-light detection
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2012
We present the operation of the avalanche photodiode from Hamamatsu to the detection of xenon scintillation light. The APD was operated in pure xenon and the chamber was irradiated with X-Rays. The quantum efficiency of the APD has been measured to be 69 ± 19 %.
Detection of VUV Light with Avalanche Photodiodes
https://www.intechopen.com/chapters/18837, 2011
Silicon avalanche photodiodes are alternative devices to photomultiplier tubes in photon detection applications, presenting advantages that include compact structure, capability to sustain high pressure, low power consumption, wide dynamic range and high quantum efficiency, covering a wider spectral range. Therefore, they provide a more efficient conversion of the scintillation light into charge carriers. Major drawbacks are lower gains, of few hundreds, higher detection limits and non-uniformities in the percent range. Windowless APDs with spectral sensitivity extended downto the VUV region (~120 nm) have been developed by API [1], RMD [2] and Hamamatsu [3]. They have been used as photosensors for scintillation light produced in noble gases [4-6] and liquids [7-10] for X- and γ-ray spectroscopy applications. Up to now, the main application of APDs as VUV detectors is aimed for a neutrinoless double beta decay experiment using high pressure xenon [6]. Wide band-gap semiconductor photodiodes such as GaN and SiC are also alternative to photomultiplier tubes in UV detection. However, compared to Si-APDs, they present smaller active area of the order of the mm2, with higher wafer non-uniformities, lower quantum efficiency and reduced spectral sensitivity in the VUV region (usually useful above 200 nm). On the other hand, they present some advantages, namely the lower biasing voltages, higher gains with lower leak currents, the solar blind capability. Recent reviews on these APDs can be found in [11-17] and references therein. Through the last decade, we have investigated the response characteristics of a large area APD from API to the scintillation VUV light produced in gaseous argon and xenon at room temperature [4,5]. The emission spectra for argon and xenon electroluminescence is a narrow continuum peaking at about 128 and 172 nm, respectively, with 10 nm FWHM for both cases [18], and corresponds to the lower limit of the APD spectral response. For the 128 and 172 nm VUV light from argon and xenon scintillation, the effective quantum efficiency, here defined as the average number of free electrons produced in the APD per incident VUV photon is 0.5 and 1.1, respectively, corresponding to a spectral sensitivity of about 50 and 150 mA/W [4,19]. In this chapter, we review and summarize the results of our investigation, namely the gain non-linearity between the detection of X-rays and VUV light [20], the gain dependence on temperature [21,22], the behaviour under intense magnetic fields [23], the minimum detection limit, i.e. the minimum number of photons detectable above the noise level, and the statistical fluctuations in VUV photon detection [24]. ... Cristina MB Monteiro, Luís MP Fernandes and Joaquim MF dos Santos Instrumentation Centre (CI), Physics Department, University of Coimbra ...
A Multi-APD readout for EL detectors
Journal of Physics: Conference Series, 2011
Detectors with an electroluminesence readout show an excellence performance in respect of energy resolution making them interesting for various applications as X-ray detection, double beta and dark matter experiments, Compton and γ cameras, etc. In the following the study of a readout based on avalanche photo diodes to detect directly the VUV photons is presented. Results of measurements with 5 APDs in xenon at pressures between 1 and 1.65 bar are shown indicating that such a readout can provide excellent energy and a moderate position resolution.
Improved x-ray detection and particle identification with avalanche photodiodes
Review of Scientific Instruments, 2015
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2, and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g. to distinguish between x-rays and MeV electrons in our experiment.