Erratum: “Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy” [Appl. Phys. Lett. 81, 960 (2002)] (original) (raw)

Applied Physics Letters

Abstract

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate GaAs/AlGaAs buried heterostructure lasers. Laser mesas are buried with GaInP:Fe selectively regrown by hydride vapor phase epitaxy. It is shown that a complete 2D map of the electrical properties of device structure including, delineation of regrown interfaces and electrical nature of the regrown GaInP layer can be obtained.

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