High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP (original) (raw)
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Isolation properties and experimental ranges of high energy ions in GaAs and InP
Journal of Applied Physics, 1992
The formation of high-resistivity layers in initially highly doped n-and p-type epitaxial GaAs by the passage of 25-to 50-MeV oxygen ions was investigated. The experimentally determined projected ranges of these ions are 14.0 and 28.8 ,um, respectively. The sheet resistance of thin (0.5 ym) epitaxial surface layers exposed to such ions increases rapidly with fluence in the range 10'3-1015 cm-' but, depending on the initial doping density, may decrease again at higher doses. The remnant conductivity in the epitaxial layers after implantation is dominated by hopping processes with low activation energies (43-68 meV). Secondary-ion mass spectrometry was used to measure the depth profiles of Si ions implanted into GaAs and InP at energies of 30-70 MeV. The projected ranges are slightly larger (< 10%) than those predicted by current theory, and the activation efficiency of the implanted Si ions in both GaAs and InP is higher than for low-energy ( -100 keV) ions.
Defects Produced by High Energy Oxygen Ions Implanted in Silicon
MRS Proceedings, 1989
Rutherford backscattering/channeling analysis was used to study the damage creation processes occuring during 1 MeV O+ implantation in silicon. The target temperature was varied from RT to 500°C using beam heating. The corresponding damage profiles and dechanneling behaviour were studied. Several implantations were performed at 77K for comparison. Transmission electron microscopy observations were connected to the dechanneling measurements in order to determine the dominant kind of defect in each case.For 77K implants, the defects are mainly interstitials distributed according the energy deposition in elastic collisions, extending up to the surface. At 500°C, the defects are imperfect dislocations confined in a narrow band around the mean range of oxygen ions. We demonstrate that dechanneling in samples implanted at intermediate temperatures results from a mixing of point defects and distorsion centers. The relative importance of the two kind of defects is followed as a function of ...
Structural studies of 20 keV oxygen-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
Silicon wafers were implanted with 20 keV O 2 up to total¯uence of 1 Â 10 18 O 2 cm À2 to synthesize SiO 2 layers. The FTIR, ESR and C±V studies of as-implanted samples and samples nitrogen-annealed at 500°C and 800°C are reported. The FTIR spectrum of the as-implanted sample shows absorption bands corresponding to the stretching (1050 cm À1 , strong), the bending (800 cm À1 , weak) and the rocking (415 cm À1 , weak) modes of SiO 2 . The peaks shift towards higher wave number on annealing. The ESR signal of the as-implanted sample exhibits an isotropic g-value 2.0028, the line width 3.75 G and the spin density 1X1 Â 10 16 cm À2 which disappears on annealing at 800°C. The interface state density distribution as a U-shape and a minimum value of $7±8 Â 10 11 cm À2 eV À1 . Ó
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
The formation and structure of buried SiO, layers formed by oxygen ion implantation into silicon at 150 keV have been studied by cross-sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS). The implanted oxygen dose was increased from 0.1 to 0.65 X lOI O+/cm' and the wafers were annealed for 5 hours at 1300 o C. A dose of 0.45 x 10's O+/cm* was needed to produce a continuous buried oxide layer after annealing, even though a buried layer was not present in the as-implanted material. At this dose, no overlayer threading dislocations were visible by XTEM although small twins and stacking faults were present near the upper Si/SiO, interface. The type of defect being formed was found to depend on the morphology of the growing interface.
Journal of Non-Crystalline Solids, 2002
Thermally grown SiO 2 layers of thickness d ¼ 500 nm have been implanted by Ge þ , Si þ , and O þ ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D i ¼ 5 Â 10 16 ions/cm 2 . Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d m ffi 250 nm of the SiO 2 layers. After thermal annealing to 900°C for 1 h in dry nitrogen or vacuum the typical violet luminescence band (k ¼ 400 nm) of the Ge þ implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. Implanting oxygen increases the red band (k ¼ 650 nm) but does not affect the blue band (k ¼ 460 nm). Silicon surplus increases the amplitude of the blue (B) luminescence, but reduces the amplitude of the red (R) one. Studying the irradiation dose dependence of these blue and red bands we have established defect kinetics in SiO 2 including six main defects and precursors, including the non-bridging oxygen hole center for the red luminescence, the twofold-coordinated silicon as the oxygen deficient center ODC(2) for the blue luminescence and the mobile oxygen as the main transmitter between precursors and the radiation induced defects. The kinetics are described by a set of eight differential equations which predict the dose dependence of the CL. Ó
Chemical composition of native oxides on noble gases implanted GaAs
Thin Solid Films, 2016
On the surfaces of crystalline semi-insulating GaAs (100), irradiated with noble gas Ar + and Xe + layers of native oxides are formed in the air under ordinary conditions. The surface atomic density of elements and chemical composition of those near the surface layers were studied by means of Rutherford backscattering spectroscopy, nuclear reaction and X-ray photoelectron spectroscopy. In these layers the dependences of the surface atomic density of oxygen and chemical compositions as a function of doses in the region from 1 × 10 13 to 1 × 10 16 ions/cm 2 were determined. It was found that the former value depends on the kind of implanted ions and the relationships of Ga 2 O 3 , As 2 O 3 and As 2 O 5 in the native oxide layers changed with the increase of the fluence. Moreover, the concentrations of Ga 2 O 3 increased and those of As 2 O 3 and As 2 O 5 decreased with the increasing irradiation fluence.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
In this work the structural analysis of the buried oxide layers formed by high dose oxygen ion implantation into S : through a screen oxide layer and annealing has been performed by infrared absorption, X-ray photoelectron spectroscopy and el!tpsometry measurements . The correlation between the measurements from the different techniques points out the high structural quality of the buried oxide layers from the ant-led tiowover . structural disorder is observed in the regions close to the Si/SiO, int,faces. This is strongly dependent on the screen oxide thickness . For the ûdck Si/SiO, interface, thiti dependence can be correlated with the density of Si islands in the huricd oxide layer .
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
Materials Science and Engineering B, 2003
In this paper, an overview will be given about analytical techniques which are suitable for the study of oxygen and oxygen precipitation in highly-and lowly-doped silicon. It will be shown that in the case of highly-doped silicon, the application of Fourier Transform Infrared (FT-IR) absorption spectroscopy requires the use of ultra-thinned or high-fluence irradiated samples and a dedicated data analysis. This sample preparation is necessary to reduce the free carrier absorption in the mid-IR region. It is shown that besides the interstitial oxygen concentration [O i ] and the amount of precipitated oxygen, it is possible to determine the stoichiometry of oxygen precipitates from the study of the corresponding absorption bands. Oxygen precipitation in p ' silicon can also be investigated by the D1 Á/D2 lines in photoluminescence (PL) on as-grown or heat Á/treated material without special sample preparation. In oxygen-doped high-resistivity float-zone silicon, standard FT-IR analysis can be applied to determine [O i ]. The presence of oxygen-related shallow donors can be probed by a combination of electrical (spreading resistance probe, SRP; capacitance Á/voltage, C Á/V ) and (quasi-)spectroscopic techniques (deep-level transient spectroscopy, DLTS). #
Journal of Electronic Materials, 1995
The defect engineering in metalorganic vapor phase epitaxy In Gal_~As and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of A1 and O, and the compensation of shallow Si donors in InxGal_~As:Si with 0 < x < 0.25. With the same DEALO mole fraction during growth, the incorporation of A1 and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In,Gal_xAs:Si:O samples with 0 < x < 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped Ino.53Gao.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of A1 and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.