Front-side micromachined porous silicon nitrogen dioxide gas sensor (original) (raw)

In this paper a new C-MOS compatible fabrication process is presented for a nitrogen dioxide porous silicon PS sensor. Electrically insulated PS sensing layers and even free-standing PS membranes have been obtained by front side electrochemical micromachining, reducing in this way electrical leakage towards the crystalline substrate. The electrical behavior of the device in a controlled environment was measured by means of a volt᎐amperometric technique at constant bias. A huge variation of the Ž . current was detected at RT for NO concentrations as low as 200 ppb ⌬GrGs 111 . The interference of humidity, ethanol, 2 methanol, CO and ozone is also discussed. ᮊ

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