Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques (original) (raw)
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Ion beam shadowing effects in SIMS depth profile analysis of MBE-grown nanostructures
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Ion beam sputtering of molecular beam epitaxy (MBE) grown laser heterostructures was performed in the secondary ion mass spectrometry (SIMS) depth profile analysis. The layered structures In0.24Al0.19Ga0.57As/Al0.25Ga0.75As/GaAs were bombarded with Ar+ ion beam of two energies 5000 and 880eV and several current densities. For the examined 4-μm-thick laser structures we obtained the depth profile resolution Δz16–84%=7nm measured from the rising
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